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dc.contributor.author Baik, Seunghun -
dc.contributor.author Kwon, Dong-Jae -
dc.contributor.author Kang, Hongki -
dc.contributor.author Jang, Jae Eun -
dc.contributor.author Jang, Jaewon -
dc.contributor.author Kim, Y. S. -
dc.contributor.author Kwon, Hyuk-Jun -
dc.date.accessioned 2021-01-13T05:27:32Z -
dc.date.available 2021-01-13T05:27:32Z -
dc.date.created 2020-10-26 -
dc.date.issued 2020-09 -
dc.identifier.issn 2169-3536 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/12560 -
dc.description.abstract Recently, a shallow and conformal doping profile is required for promising 3D structured devices. In this study, we deposited the dopant phosphorus (P) using modified plasma assisted doping (PaD) followed by an annealing process to electrically activate the dopants. A rapid thermal annealing process (RTP) was the first approach tested for activation but it resulted in a deep junction ( > 35 nm). To reduce the junction depth, we tried the fiash lamp annealing process (FLP) to shorten the annealing time. We also predicted the annealing temperature by numerical thermal analysis, which reached 1,020 degrees C. However, the FLP resulted in a deep junction (similar to 30 nm), which was not shallow enough to suppress short channel effects. Since an even shorter annealing process was required to form a ultra-shallow junction, we tried the laser annealing process (LAP) as a promising alternative. The LAP, which had a power density of 0.3 J/cm(2), increased the surface temperature up to 1,100 degrees C with a shallow isothermal layer. Using the LAP, we achieved a USJ with an activated surface dopant concentration of 3.86 x 10(19) cm(-3) and a junction depth of 10 nm, which will allow further scaling-down of devices. -
dc.language English -
dc.publisher Institute of Electrical and Electronics Engineers Inc. -
dc.title Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method -
dc.type Article -
dc.identifier.doi 10.1109/ACCESS.2020.3024636 -
dc.identifier.scopusid 2-s2.0-85099850974 -
dc.identifier.bibliographicCitation IEEE Access, v.8, pp.172166 - 172174 -
dc.description.isOpenAccess TRUE -
dc.subject.keywordAuthor Three-dimensional displays -
dc.subject.keywordAuthor Surface treatment -
dc.subject.keywordAuthor Silicon -
dc.subject.keywordAuthor Doping profiles -
dc.subject.keywordAuthor Ultra-shallow junction -
dc.subject.keywordAuthor phosphorus -
dc.subject.keywordAuthor plasma assisted doping -
dc.subject.keywordAuthor laser annealing process -
dc.subject.keywordAuthor Annealing -
dc.subject.keywordAuthor Plasmas -
dc.subject.keywordPlus DOPANT DIFFUSION -
dc.subject.keywordPlus SPREADING RESISTANCE -
dc.subject.keywordPlus INDUCED DEFECTS -
dc.subject.keywordPlus POINT-DEFECTS -
dc.subject.keywordPlus SILICON -
dc.subject.keywordPlus PHOSPHORUS -
dc.subject.keywordPlus PROFILES -
dc.subject.keywordPlus DAMAGE -
dc.subject.keywordPlus FLASH -
dc.citation.endPage 172174 -
dc.citation.startPage 172166 -
dc.citation.title IEEE Access -
dc.citation.volume 8 -

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