DGIST Library Repository

Browsing by Titles

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 3 of 3

Article
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
  • Baik, Seunghun ; 
  • Kwon, Hyeokjin ; 
  • Paeng, Chuck ; 
  • Zhang, He ; 
  • Kalkofen, Bodo ; 
  • Jang, Jae Eun ; 
  • Kim, Y. S. ; 
  • Kwon, Hyuk-Jun
  • 2019-09
  • Baik, Seunghun. (2019-09). Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process. IEEE Electron Device Letters, 40(9), 1507–1510. doi: 10.1109/LED.2019.2931404
  • Institute of Electrical and Electronics Engineers
  • View : 717
  • Download : 0

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Article
Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method
  • 2020-09
  • Baik, Seunghun. (2020-09). Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method. IEEE Access, 8, 172166–172174. doi: 10.1109/ACCESS.2020.3024636
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 705
  • Download : 237
Article
High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment
  • 2022-08
  • Jeong, Heejae. (2022-08). High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment. IEEE Electron Device Letters, 43(8), 1315–1318. doi: 10.1109/LED.2022.3182730
  • Institute of Electrical and Electronics Engineers
  • View : 597
  • Download : 0
1