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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 7 of 7

Article
Characterization of trap dynamics via transient response in amorphous InGaZnO thin-film transistors
  • Choi, Yubin ; 
  • Yang, Hyojin ; 
  • Kim, Hwan Jin ; 
  • Park, Sejun ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Kim, Dong Myong ; 
  • Kim, Haesung ; 
  • Bae, Jong-Ho
  • 2026-06
  • APPLIED PHYSICS LETTERS, v.128, no.24
  • AIP Publishing
  • View : 22
  • Download : 0
Article
Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistors
  • Yang, Hyojin ; 
  • Kim, Haesung ; 
  • Kim, Hwan Jin ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Lee, Yoon Jung ; 
  • Bae, Jong-Ho
  • 2026-03
  • Materials Science in Semiconductor Processing, v.204
  • Elsevier
  • View : 95
  • Download : 0
Article
Dual-Gate Carbon Nanotube Field Effect Transistors for Physically Unclonable Functional Applications
  • Im, Jeong Yeon ; 
  • Yang, Hyo-In ; 
  • Park, Ji Won ; 
  • Lee, Hanbin ; 
  • Park, So Jeong ; 
  • Jeong, Seonghyeon ; 
  • Kim, Dong Myong ; 
  • Kim, Dae Hwan ; 
  • Kang, Min-Ho ; 
  • Lee, Yoon Jung ; 
    • et al
  • 2025-06
  • ACS Applied Materials & Interfaces, v.17, no.28, pp.40906 - 40914
  • American Chemical Society
  • View : 151
  • Download : 0
Article
Highly Operable Ferroelectric Tunnel Junctions via Domain-Engineered Ferroelectrics and Interfacial Oxide Control
  • Ha, Sanghun ; 
  • Yang, Hyojin ; 
  • Park, Sungho ; 
  • Kim, Minwoo ; 
  • Kim, Dong Myong ; 
  • Lee, Junjong ; 
  • Kim, Dae Hwan ; 
  • Choi, Sung-Jin ; 
  • Lee, Yoon Jung
  • 2026-07
  • ACS APPLIED ELECTRONIC MATERIALS, v.8, no.13, pp.5674 - 5683
  • AMER CHEMICAL SOC
  • View : 34
  • Download : 0
Conference
Quantitative Analysis of Endurance-dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
  • Yang, Hyojin ; 
  • Kim, Haesung ; 
  • Han, Changhyeon ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Kim, Dong Myong ; 
  • Kwon, Daewoong ; 
  • Bae, Jong-Ho
  • 2025-06-08
  • 2025 Silicon Nanoelectronics Workshop, SNW 2025, pp.74 - 75
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 55
  • Download : 0

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor

Article
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor
  • Lee, Haneul ; 
  • Kim, Sujong ; 
  • Han, Changhyeon ; 
  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Park, Sejun ; 
  • Yun, Sanghyuk ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
    • et al
  • 2026-01
  • ADVANCED ELECTRONIC MATERIALS, v.12, no.2
  • WILEY
  • View : 46
  • Download : 42

Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors

Article
Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors
  • Kim, Seungki ; 
  • Kim, Wonjung ; 
  • Jeon, Seong Hoon ; 
  • Kim, Changwook ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Lee, Yoon Jung ; 
  • Kim, Dae Hwan
  • 2025-11
  • Solid-State Electronics, v.229
  • Elsevier
  • View : 959
  • Download : 209
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