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Showing results 1 to 4 of 4

Article
Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering
  • Min, Won Ja ; 
  • Kim, Jwasoon ; 
  • Park, Kyungsu ; 
  • Marmitt, Gabriel ; 
  • England, Jonathan ; 
  • Moon, DaeWon
  • 2019-07
  • Min, Won Ja. (2019-07). Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering. doi: 10.1021/acs.analchem.9b02687
  • American Chemical Society
  • View : 407
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Article
Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy
  • Min, Won Ja ; 
  • Park, Kyungsu ; 
  • Yu, Kyu-Sang ; 
  • Joo, Sungjung ; 
  • Kim, Yong-Sung ; 
  • Moon, Dae Won
  • 2015-10-07
  • Min, Won Ja. (2015-10-07). Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy. Journal of Applied Physics, 118(13). doi: 10.1063/1.4932149
  • American Institute of Physics Publishing
  • View : 965
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Article
Quantitative Compositional Profiling of Conjugated Quantum Dots with Single Atomic Layer Depth Resolution via Time-of-Flight Medium-Energy Ion Scattering Spectroscopy
  • Jung, Kang-Won ; 
  • Yu, Hyunung ; 
  • Min, Won Ja ; 
  • Yu, Kyu-Sang ; 
  • Sortica, M. A. ; 
  • Grande, Pedro L. ; 
  • Moon, DaeWon
  • 2014-01-21
  • Jung, Kang-Won. (2014-01-21). Quantitative Compositional Profiling of Conjugated Quantum Dots with Single Atomic Layer Depth Resolution via Time-of-Flight Medium-Energy Ion Scattering Spectroscopy. Analytical Chemistry, 86(2), 1091–1097. doi: 10.1021/ac402753j
  • American Chemical Society
  • View : 875
  • Download : 0
Article
Round-robin test of medium-energy ion scattering for quantitative depth profiling of ultrathin HfO 2 /SiO 2 /Si films
  • Min, Won Ja ; 
  • Marmitt, Gabriel ; 
  • Grande, Pedro L. ; 
  • Moon, DaeWon
  • 2019-07
  • Min, Won Ja. (2019-07). Round-robin test of medium-energy ion scattering for quantitative depth profiling of ultrathin HfO 2 /SiO 2 /Si films. doi: 10.1002/sia.6642
  • John Wiley & Sons Inc.
  • View : 571
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