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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 3 of 3

Article
Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates
  • Park, Seonwoo ; 
  • Kim, Kyoung Hwa ; 
  • Mun, Suhyun ; 
  • Jeon, Injun ; 
  • Mun, Seon Jin ; 
  • Cho, Young-Hun ; 
  • Heo, Jeongbin ; 
  • Yang, Min ; 
  • Ahn, Hyung Soo ; 
  • Jeon, Hunsoo ; 
    • et al
  • 2024-11
  • Park, Seonwoo. (2024-11). Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates. Journal of the Korean Physical Society, 85(10), 810–824. doi: 10.1007/s40042-024-01170-z
  • Korean Physical Society
  • View : 152
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Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method

Article
Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method
  • Mun, Suhyun ; 
  • Kim, Kyoung Hwa ; 
  • Park, Seonwoo ; 
  • Kwon, Eunmin ; 
  • Yang, Min ; 
  • Ahn, Hyung Soo ; 
  • Jeon, Injun ; 
  • Jeon, Hunsoo ; 
  • Lee, Jae Hak ; 
  • Jung, Kwanghee ; 
    • et al
  • 2025-02
  • Mun, Suhyun. (2025-02). Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method. Journal of Ceramic Processing Research, 26(1), 82–90. doi: 10.36410/jcpr.2025.26.1.82
  • 한양대학교 청정에너지연구소
  • View : 702
  • Download : 17
Article
Realization of a 2H–Si microneedle with an ultrafast growth rate of 6.7 × 104 Å·s−1
  • Mun, Suhyun ; 
  • Kim, Kyoung Hwa ; 
  • Park, Seonwoo ; 
  • Jeon, Injun ; 
  • Jeon, Hunsoo ; 
  • Lee, Jae Hak ; 
  • Yang, Min ; 
  • Shin, Myeong-Cheol ; 
  • Oh, Jong-Min ; 
  • Shin, Weon Ho ; 
    • et al
  • 2025-03
  • Mun, Suhyun. (2025-03). Realization of a 2H–Si microneedle with an ultrafast growth rate of 6.7 × 104 Å·s−1. Semiconductor Science and Technology, 40(3). doi: 10.1088/1361-6641/ada9c9
  • Institute of Physics Publishing
  • View : 700
  • Download : 0
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