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Showing results 1 to 5 of 5

Conference
Atomic layer deposition of RuO2 using a new metalorganic precursor as a diffusion barrier for Ru interconnect
  • Kim, Youn-Hye ; 
  • Kotsugi, Yohei ; 
  • Cheon, Taehoon ; 
  • Ramesh, Rahul ; 
  • Kim, Soo-Hyun
  • 2021-07-06
  • Kim, Youn-Hye. (2021-07-06). Atomic layer deposition of RuO2 using a new metalorganic precursor as a diffusion barrier for Ru interconnect. 24th Annual IEEE International Interconnect Technology Conference, IITC 2021. doi: 10.1109/IITC51362.2021.9537498
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 148
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Article
Atomic-Layer-Deposited MoN x Thin Films on Three-Dimensional Ni Foam as Efficient Catalysts for the Electrochemical Hydrogen Evolution Reaction
  • Ramesh, Rahul ; 
  • Nandi, Dip K. ; 
  • Kim, Tae Hyun ; 
  • Cheon, Taehoon ; 
  • Oh, Jihun ; 
  • Kim, Soo-Hyun
  • 2019-05
  • Ramesh, Rahul. (2019-05). Atomic-Layer-Deposited MoN x Thin Films on Three-Dimensional Ni Foam as Efficient Catalysts for the Electrochemical Hydrogen Evolution Reaction. doi: 10.1021/acsami.8b20437
  • American Chemical Society
  • View : 888
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Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode

Article
Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode
  • Ansari, Mohd Zahid ; 
  • Parveen, Nazish ; 
  • Nandi, Dip K. ; 
  • Ramesh, Rahul ; 
  • Ansari, Sajid Ali ; 
  • Cheon, Taehoon ; 
  • Kim, Soo-Hyun
  • 2019-07
  • Ansari, Mohd Zahid. (2019-07). Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode. doi: 10.1038/s41598-019-46679-7
  • Nature Publishing Group
  • View : 1056
  • Download : 283
Article
Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices
  • Ansari, Mohd Zahid ; 
  • Nandi, Dip K. ; 
  • Janicek, Petr ; 
  • Ansari, Sajid Ali ; 
  • Ramesh, Rahul ; 
  • Cheon, Taehoon ; 
  • Shong, Bonggeun ; 
  • Kim, Soo-Hyun
  • 2019-11
  • Ansari, Mohd Zahid. (2019-11). Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices. ACS Applied Materials & Interfaces, 11(46), 43608–43621. doi: 10.1021/acsami.9b15790
  • American Chemical Society
  • View : 870
  • Download : 0
Article
Ultralow Loading (Single-Atom and Clusters) of the Pt Catalyst by Atomic Layer Deposition Using Dimethyl ((3,4-eta) N,N-dimethyl-3-butene-1-amine-N) Platinum (DDAP) on the High-Surface-Area Substrate for Hydrogen Evolution Reaction
  • Ramesh, Rahul ; 
  • Han, Seungmin ; 
  • Nandi, Dip K. ; 
  • Sawant, Sandesh Y. ; 
  • Kim, Deok Hyun ; 
  • Cheon, Taehoon ; 
  • Cho, Moo Hwan ; 
  • Harada, Ryosuke ; 
  • Shigetomi, Toshiyuki ; 
  • Suzuki, Kazuharu ; 
    • et al
  • 2021-02
  • Ramesh, Rahul. (2021-02). Ultralow Loading (Single-Atom and Clusters) of the Pt Catalyst by Atomic Layer Deposition Using Dimethyl ((3,4-eta) N,N-dimethyl-3-butene-1-amine-N) Platinum (DDAP) on the High-Surface-Area Substrate for Hydrogen Evolution Reaction. Advanced Materials Interfaces, 8(3), 2001508. doi: 10.1002/admi.202001508
  • Wiley-VCH Verlag
  • View : 506
  • Download : 0
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