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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding
  • Yoon, Jong-Hyeok ; 
  • Chang, Muya ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
  • Chang, Meng-Fan ; 
  • Raychowdhury, Arijit
  • 2022-03
  • Yoon, Jong-Hyeok. (2022-03). A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. IEEE Journal of Solid-State Circuits, 57(3), 845–857. doi: 10.1109/JSSC.2022.3141370
  • Institute of Electrical and Electronics Engineers
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Article
A Hybrid Digital-Analog Compute-in-Memory Using Content-Addressable Memory With Flexible Multi-Bit Slicing
  • Jung, Sangwoo ; 
  • Lee, Hojin ; 
  • Park, Jiyong ; 
  • Lee, Yejin ; 
  • Park, Dahoon ; 
  • Shin, Hyunseob ; 
  • Yoon, Jong-Hyeok ; 
  • Kung, Jaeha
  • 2026-05
  • IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.73, no.5, pp.3452 - 3465
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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