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Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Article
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
  • Kim, Joonwoo ; 
  • Myung, Sung ; 
  • Noh, Hee-Yeon ; 
  • Jeong, Soon Moon ; 
  • Jeong, Jaewook
  • 2015-09
  • AIP Advances, v.5, no.9
  • American Institute of Physics Publishing
  • View : 1035
  • Download : 78
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 155
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
  • View : 860
  • Download : 0
Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 911
  • Download : 0
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