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Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM

Article
Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM
  • Ha, Seunghyun ; 
  • Lee, Hyunjae ; 
  • Lee, Won-Yong ; 
  • Jang, Bongho ; 
  • Kwon, Hyuk-Jun ; 
  • Kim, Kwangeun ; 
  • Jang, Jaewon
  • 2019-09
  • Ha, Seunghyun. (2019-09). Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM. Electronics, 8(9). doi: 10.3390/electronics8090947
  • MDPI AG
  • View : 682
  • Download : 98
Article
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Namgung, Sook ; 
  • Kim, Hyangil ; 
  • Nandi, Dip K. ; 
  • Cheon, Taehoon ; 
  • Siddiqui, Masoom Raza ; 
  • Imran, Muhammad ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
    • et al
  • 2024-03
  • Ansari, Mohd Zahid. (2024-03). New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition. Surfaces and Interfaces, 46. doi: 10.1016/j.surfin.2024.104014
  • Elsevier
  • View : 287
  • Download : 0

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Article
Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
  • Kim, Kyoungdu ; 
  • Hong, Woongki ; 
  • Lee, Changmin ; 
  • Lee, Won-Yong ; 
  • Kim, Do Won ; 
  • Kim, Hyeon Joong ; 
  • Kwon, Hyuk-Jun ; 
  • Kang, Hongki ; 
  • Jang, Jaewon
  • 2021-11
  • Kim, Kyoungdu. (2021-11). Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory. doi: 10.1088/2053-1591/ac3400
  • IOP Publishing Ltd.
  • View : 595
  • Download : 340

Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

Article
Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning
  • Jang, Bongho ; 
  • Kim, Junil ; 
  • Lee, Jieun ; 
  • Jang, Jae-Won ; 
  • Kwon, Hyuk-Jun
  • 2024-08
  • Jang, Bongho. (2024-08). Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning. Journal of Materials Science and Technology, 189, 68–76. doi: 10.1016/j.jmst.2023.12.016
  • Elsevier
  • View : 141
  • Download : 68
Article
Ultrathin ZrO 2 on LiNi 0.5 Mn 0.3 Co 0.2 O 2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries
  • 2019-08
  • Ahn, Jinhyeok. (2019-08). Ultrathin ZrO 2 on LiNi 0.5 Mn 0.3 Co 0.2 O 2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries. Applied Surface Science, 484, 701–709. doi: 10.1016/j.apsusc.2019.04.123
  • Elsevier BV
  • View : 823
  • Download : 0
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