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Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM

Title
Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM
Authors
Ha, SeunghyunLee, HyunjaeLee, Won-YongJang, BonghoKwon, Hyuk-JunKim, KwangeunJang, Jaewon
DGIST Authors
Kwon, Hyuk-Jun
Issue Date
2019-08
Citation
Electronics, 8(9)
Type
Article
Article Type
Article
Author Keywords
sol-gelZrO2resistive random-access memoryannealing environment
Keywords
RESISTANCEFILM
ISSN
2079-9292
Abstract
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
URI
http://hdl.handle.net/20.500.11750/10838
DOI
10.3390/electronics8090947
Publisher
MDPI AG
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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