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Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Title
Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
Authors
Kim, KyoungduHong, WoongkiLee, ChangminLee, Won-YongKim, Do WonKim, Hyeon JoongKwon, Hyuk-JunKang, HongkiJang, Jaewon
DGIST Authors
Kim, Kyoungdu; Hong, Woongki; Lee, Changmin; Lee, Won-Yong; Kim, Do Won; Kim, Hyeon Joong; Kwon, Hyuk-JunKang, Hongki; Jang, Jaewon
Issue Date
2021-11
Citation
Materials Research Express, 8(11)
Type
Article
Author Keywords
sol-gelZrO2resistive random access memoryamorphous phaseelectrochemical metallization cell
ISSN
2053-1591
Abstract
In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values. © 2021 Institute of Physics Publishing. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/15976
DOI
10.1088/2053-1591/ac3400
Publisher
IOP Publishing Ltd.
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
Collection:
Department of Electrical Engineering and Computer ScienceAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles
Department of Electrical Engineering and Computer ScienceAdvanced Electronic Devices Research Group(AEDRG) - Kang Lab.1. Journal Articles


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