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dc.contributor.author Choi, Songhee ko
dc.contributor.author Son, Jaeseok ko
dc.contributor.author Oh, Junhyeob ko
dc.contributor.author Lee, Ji-Hyun ko
dc.contributor.author Jang, Jae Hyuck ko
dc.contributor.author Lee, Shinbuhm ko
dc.date.accessioned 2019-07-02T09:19:38Z -
dc.date.available 2019-07-02T09:19:38Z -
dc.date.created 2019-07-01 -
dc.date.issued 2019-06 -
dc.identifier.citation Physical Review Materials, v.3, no.6, pp.063401 -
dc.identifier.issn 2475-9953 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/10078 -
dc.description.abstract Four oxidation states (V2+,V3+,V4+,andV5+) in vanadium oxides and the conversion between them have attracted attention for application to batteries and electronics. Compared to single-valence counterparts, however, there have been few reports on the fundamental properties of mixed-valence vanadium oxide films, as their complexity and closeness in thermodynamic phase diagrams hinder the formation of pure phases in film. Here, using an epitaxial growth technique with precise control of oxygen partial pressure (20-100 mTorr) on (111)-oriented Y-stabilized ZrO2, we selectively stabilize pure phases of VO2(B) (m=∞), V6O13 (m=6), and V2O5 (m=2), so-called Wadsley phases (VmO2m+1,m>1) in which V4+ and/or V5+ can coexist. Fractional increase of V4+ changes the electrical ground state, insulating VO2(B) and V2O5, metallic V6O13 transition into insulators below 150 K. While VO2(B) and V6O13 exhibit strong spectral weights at low photon energy in the roomerature extinction coefficients, the band-edge absorption shifts toward higher photon energy for smaller m, opening an indirect band gap of 2.6 eV in V2O5. The sharp contrast of electrical and optical properties between vanadium Wadsley phases highlights the importance of precisely controlling the oxidation state of vanadium. © 2019 American Physical Society. -
dc.language English -
dc.publisher American Physical Society -
dc.title Sharp contrast in the electrical and optical properties of vanadium Wadsley (VmO2m+1, m > 1) epitaxial films selectively stabilized on (111)-oriented Y-stabilized ZrO2 -
dc.type Article -
dc.identifier.doi 10.1103/PhysRevMaterials.3.063401 -
dc.identifier.wosid 000470902800001 -
dc.identifier.scopusid 2-s2.0-85067337644 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Son, Jaeseok -
dc.contributor.nonIdAuthor Oh, Junhyeob -
dc.contributor.nonIdAuthor Lee, Ji-Hyun -
dc.contributor.nonIdAuthor Jang, Jae Hyuck -
dc.identifier.citationVolume 3 -
dc.identifier.citationNumber 6 -
dc.identifier.citationStartPage 063401 -
dc.identifier.citationTitle Physical Review Materials -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.subject.keywordPlus TRANSITION -
dc.subject.keywordPlus BULK -
dc.contributor.affiliatedAuthor Lee, Shinbuhm -
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Department of Physics and Chemistry Multifunctional films and nanostructures Lab 1. Journal Articles

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