Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yun, Hyun-Sung | - |
dc.contributor.author | Park, Byung-wook | - |
dc.contributor.author | Choi, Yong Chan | - |
dc.contributor.author | Im, Jino | - |
dc.contributor.author | Shin, Tae Joo | - |
dc.contributor.author | Seok, Sang Il | - |
dc.date.accessioned | 2019-09-22T11:09:56Z | - |
dc.date.available | 2019-09-22T11:09:56Z | - |
dc.date.created | 2019-08-22 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 1614-6832 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10643 | - |
dc.description.abstract | Tin sulfide (SnS) is one of the most promising solar cell materials, as it is abundant, environment friendly, available at low cost, and offers long-term stability. However, the highest efficiency of the SnS solar cell reported so far remains at 4.36% even using the expensive atomic layer deposition process. This study reports on the fabrication of SnS solar cells by a solution process that employs rapid thermal treatment for few seconds under Ar gas flow after spin-coating a precursor solution of SnCl2 and thiourea dissolved in dimethylformamide onto a nanostructured thin TiO2 electrode. The best-performing cell exhibits power conversion efficiency (PCE) of 3.8% under 1 sun radiation conditions (AM1.5G). Moreover, secondary treatment using SnCl2 results in a significant improvement of 4.8% in PCE, which is one of the highest efficiencies among SnS-based solar cells, especially with TiO2 electrodes. The thin film properties of SnS after SnCl2 secondary treatment are analyzed using grazing-incidence wide-angle X-ray scattering, and high-resolution transmittance electron microscopy. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Efficient Nanostructured TiO2/SnS Heterojunction Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aenm.201901343 | - |
dc.identifier.wosid | 000484085100001 | - |
dc.identifier.scopusid | 2-s2.0-85070229394 | - |
dc.identifier.bibliographicCitation | Advanced Energy Materials, v.9, no.35 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | hot carrier Ar gas | - |
dc.subject.keywordAuthor | rapid formation technique | - |
dc.subject.keywordAuthor | SnS | - |
dc.subject.keywordAuthor | solution processing | - |
dc.subject.keywordAuthor | tin chalcogenide | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | SNS | - |
dc.citation.number | 35 | - |
dc.citation.title | Advanced Energy Materials | - |
dc.citation.volume | 9 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Energy & Fuels; Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article | - |
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