Cited 11 time in webofscience Cited 13 time in scopus

High-Detectivity Flexible Near-Infrared Photodetector Based on Chalcogenide Ag2Se Nanoparticles

Title
High-Detectivity Flexible Near-Infrared Photodetector Based on Chalcogenide Ag2Se Nanoparticles
Authors
Lee, Won-YongHa, SeunghyunLee, HyunjaeBae, Jin-HyukJang, BonghoKwon, Hyuk-JunYun, YeonghunLee, SangwookJang, Jaewon
DGIST Authors
Kwon, Hyuk-Jun
Issue Date
2019-11
Citation
Advanced Optical Materials, 7(22), 1900812
Type
Article
Article Type
Article
Author Keywords
Ag2SechalcogenideflexiblenanoparticlesNIRphotodetector
Keywords
QUANTUM DOTSNANOCRYSTALSCRYSTALLINETEMPERATUREBETA-AG2SENANOWIRESPRECURSORBEHAVIORPHASE
ISSN
2195-1071
Abstract
Novel, low-voltage, high-detectivity, solution-processed, flexible near-infrared (NIR) photodetectors for optoelectronic applications are realized and their optoelectronic properties are investigated for the first time. This is achieved by synthesizing Ag2Se nanoparticles (NPs) in aqueous solutions, and depositing highly crystalline Ag2Se thin films at 150 °C with redistributed Ag2Se NPs in aqueous inks. The high conductivity and low trap concentration of the 150 °C annealed Ag2Se films result from the Ag formed inside the films and the improved film quality, respectively. These factors are both critical for the realization of high-performance flexible photodetectors. The fabricated device exhibits a high detectivity of 7.14 × 109 Jones (above 1 × 109) at room temperature, delivering low power consumption. This detectivity is superior to those of reported low band-gap semiconductor systems, although the device has undergone 0.38% compressive and tensile strains. Moreover, the performance of the device is better than that of MoS2-based phototransistors, black arsenic phosphorus field-effect transistors, or commercial thermistor bolometers at room temperature (D* ≈ 108 Jones), and is exposed to mid-infrared light. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://hdl.handle.net/20.500.11750/10644
DOI
10.1002/adom.201900812
Publisher
Wiley-VCH Verlag
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
There are no files associated with this item.
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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