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Degradation Mechanism of Vanadium Oxide Films When Grown on Y-Stabilized ZrO2 Above 500 degrees C

Title
Degradation Mechanism of Vanadium Oxide Films When Grown on Y-Stabilized ZrO2 Above 500 degrees C
Authors
Choi, SongheeOh, JunhyeobLee, Ji-HyunJang, Jae HyuckLee, Shinbuhm
DGIST Authors
Lee, Shinbuhm
Issue Date
ACCEPT
Citation
Advanced Engineering Materials
Type
Article
Article Type
Article; Early Access
Author Keywords
degradationdiffusionvanadium oxidesY-stabilized ZrO2
Keywords
TRANSITIONVO2SEMICONDUCTOR
ISSN
1438-1656
Abstract
Although vanadium oxide (VOx) phases are thermodynamically similar, Y-stabilized ZrO2 (YSZ) substrates show selective growth as single-crystalline films. However, in this study, we find that the films degrade with the formation of nanoislands when evaporating VOx onto YSZ at a substrate temperature >500 °C. The nanoislands are epitaxial, i.e., Y-doped VO2(R) at an oxygen partial pressure (Formula presented.) < 30 mTorr, and YVO4 at (Formula presented.) > 50 mTorr. Energy-dispersive X-ray spectroscopy shows that the rapid diffusion of vanadium and yttrium plays a critical role in film degradation. The degradation mechanism revealed herein guides the fabrication of VOx films for energy and electronic device applications. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://hdl.handle.net/20.500.11750/10885
DOI
10.1002/adem.201900918
Publisher
John Wiley & Sons Ltd.
Related Researcher
  • Author Lee, Shinbuhm shinbuhmlee Lab
  • Research Interests Multifunctional films; Experimental condensed matter physics
Files:
There are no files associated with this item.
Collection:
Department of Emerging Materials Scienceshinbuhmlee Lab1. Journal Articles


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