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dc.contributor.author Kim, Youngwook ko
dc.contributor.author Herlinger, Patrick ko
dc.contributor.author Taniguchi, Takashi ko
dc.contributor.author Watanabe, Kenji ko
dc.contributor.author Smet, Jurgen H. ko
dc.date.accessioned 2020-02-27T08:41:05Z -
dc.date.available 2020-02-27T08:41:05Z -
dc.date.created 2019-12-27 -
dc.date.issued 2019-12 -
dc.identifier.citation ACS Nano, v.13, no.12, pp.14182 - 14190 -
dc.identifier.issn 1936-0851 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/11382 -
dc.description.abstract The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game changer in the field of low-dimensional physics. For instance, the encapsulation of graphene or MoS2 between atomically flat hexagonal boron nitride (hBN) layers with strong affinity and graphitic gates that screen charge impurity disorder provided access to a plethora of interesting physical phenomena by drastically boosting the device quality. The encapsulation is accompanied by a self-cleansing effect at the interfaces. The otherwise predominant charged impurity disorder is minimized, and random strain fluctuations ultimately constitute the main source of residual disorder. Despite these advances, the fabricated heterostructures still vary notably in their performance. Although some achieve record mobilities, others only possess mediocre quality. Here, we report a reliable method to improve fully completed van der Waals heterostructure devices with a straightforward postprocessing surface treatment based on thermal annealing and contact mode atomic force microscopy (AFM). The impact is demonstrated by comparing magnetotransport measurements before and after the AFM treatment on one and the same device as well as on a larger set of treated and untreated devices to collect device statistics. Both the low-temperature properties and the room temperature electrical characteristics, as relevant for applications, improve on average substantially. We surmise that the main beneficial effect arises from reducing nanometer scale corrugations at the interfaces, that is, the detrimental impact of random strain fluctuations. Copyright © 2019 American Chemical Society. -
dc.language English -
dc.publisher American Chemical Society -
dc.title Reliable Postprocessing Improvement of van der Waals Heterostructures -
dc.type Article -
dc.identifier.doi 10.1021/acsnano.9b06992 -
dc.identifier.wosid 000505633300056 -
dc.identifier.scopusid 2-s2.0-85076590017 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Herlinger, Patrick -
dc.contributor.nonIdAuthor Taniguchi, Takashi -
dc.contributor.nonIdAuthor Watanabe, Kenji -
dc.contributor.nonIdAuthor Smet, Jurgen H. -
dc.identifier.citationVolume 13 -
dc.identifier.citationNumber 12 -
dc.identifier.citationStartPage 14182 -
dc.identifier.citationEndPage 14190 -
dc.identifier.citationTitle ACS Nano -
dc.type.journalArticle Article -
dc.description.isOpenAccess Y -
dc.subject.keywordAuthor van der Waals heterostructure -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor molybdenum disulfide -
dc.subject.keywordAuthor quantum Hall effect -
dc.subject.keywordAuthor Hall sensor -
dc.subject.keywordPlus QUANTUM HALL STATES -
dc.subject.keywordPlus BORON-NITRIDE -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus TRANSITION -
dc.contributor.affiliatedAuthor Kim, Youngwook -
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Department of Physics and Chemistry Topological Quantum Device Lab 1. Journal Articles

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