Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Byoung-Soo | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.contributor.author | Hwang, Dae-Kue | - |
dc.contributor.author | Lee, Seoung-Jun | - |
dc.contributor.author | Kim, Jong Su | - |
dc.date.accessioned | 2020-02-27T09:08:28Z | - |
dc.date.available | 2020-02-27T09:08:28Z | - |
dc.date.created | 2019-12-27 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 1226-086X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/11416 | - |
dc.description.abstract | In this study, we investigated the electrical and structural properties of sulfur-graded Cu2ZnSn(S,Se)4 (CZTSSe) thin films grown using a modified two-step process according to the annealing temperature. The sulfur content of the CZTSSe thin film was increased with annealing temperature and a Zn(S, Se) secondary phase was observed at temperatures higher than 500 °C. The Raman spectrum of the CZTSSe thin film shifted continuously toward the high frequency direction with increasing S content and the Cu2SnSe3 (CTSe) secondary phase was present below 440 °C. From the results of dimpling Raman spectroscopy and scanning transmission electron microscopy (STEM) line scanning, we confirmed that the S content increased gradually from the Mo back contact to the surface of the CZTSSe thin film. Finally, a sulfur-graded CZTSSe thin film with a photovoltaic efficiency of 7.03% was fabricated by optimizing the annealing temperature. © 2019 The Korean Society of Industrial and Engineering Chemistry | - |
dc.language | English | - |
dc.publisher | Korean Society of Industrial Engineering Chemistry | - |
dc.title | Effects of the annealing temperature on the properties of sulfur-graded Cu2ZnSn(S,Se)4 thin films grown by a modified two-step process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jiec.2019.11.004 | - |
dc.identifier.scopusid | 2-s2.0-85075824593 | - |
dc.identifier.bibliographicCitation | Journal of Industrial and Engineering Chemistry, v.82, pp.406 - 412 | - |
dc.identifier.kciid | ART002558582 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | CZTSSe | - |
dc.subject.keywordAuthor | Co-evaporation | - |
dc.subject.keywordAuthor | H2S gas | - |
dc.subject.keywordAuthor | Rapid thermal process | - |
dc.subject.keywordAuthor | Sulfur-graded | - |
dc.subject.keywordAuthor | Zn(S,Se) | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SOLID-SOLUTIONS | - |
dc.subject.keywordPlus | CU2ZNSNSE4 | - |
dc.subject.keywordPlus | SELENIZATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.citation.endPage | 412 | - |
dc.citation.startPage | 406 | - |
dc.citation.title | Journal of Industrial and Engineering Chemistry | - |
dc.citation.volume | 82 | - |
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