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Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device
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- Title
- Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device
- DGIST Authors
- Kim, Yoonui ; Kwon, Jaesuk ; Hwang, Hee-Kyeong ; Purnama, Indra ; You, Chun-Yeol
- Issued Date
- 2020-01
- Citation
- Kim, Yoonui. (2020-01). Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device. doi: 10.1038/s41598-020-58223-z
- Type
- Article
- Article Type
- Article
- Keywords
- DOMAIN-WALL MOTION ; SYNAPTIC-TRANSMISSION ; MEMRISTOR ; TORQUE ; GAME ; GO
- ISSN
- 2045-2322
- Abstract
-
We demonstrate the process of obtaining memristive multi-states Hall resistance (RH) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the ascend (or descend) of the RH amplitude. The primary synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), and spike-time-dependent plasticity (STDP) could then be emulated by regulating RH. Applied programmable magnetic field pulses are in varying conditions such as intensity and duration to adjust RH. These results show that analog readings of DW movement can be closely resembled with the change of synaptic weight and have great potentials for bioinspired neuromorphic computing. © 2020, The Author(s).
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- Publisher
- Nature Publishing Group
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