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Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device
Kim, Yoonui
;
Kwon, Jaesuk
;
Hwang, Hee-Kyeong
;
Purnama, Indra
;
You, Chun-Yeol
ETC
1. Journal Articles
Department of Physics and Chemistry
Spin Phenomena for Information Nano-devices(SPIN) Lab
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Title
Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device
DGIST Authors
Kim, Yoonui
;
Kwon, Jaesuk
;
Hwang, Hee-Kyeong
;
Purnama, Indra
;
You, Chun-Yeol
Issued Date
2020-01
Citation
Kim, Yoonui. (2020-01). Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device. doi: 10.1038/s41598-020-58223-z
Type
Article
Article Type
Article
Keywords
DOMAIN-WALL MOTION
;
SYNAPTIC-TRANSMISSION
;
MEMRISTOR
;
TORQUE
;
GAME
;
GO
ISSN
2045-2322
Abstract
We demonstrate the process of obtaining memristive multi-states Hall resistance (RH) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the ascend (or descend) of the RH amplitude. The primary synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), and spike-time-dependent plasticity (STDP) could then be emulated by regulating RH. Applied programmable magnetic field pulses are in varying conditions such as intensity and duration to adjust RH. These results show that analog readings of DW movement can be closely resembled with the change of synaptic weight and have great potentials for bioinspired neuromorphic computing. © 2020, The Author(s).
URI
http://hdl.handle.net/20.500.11750/11668
DOI
10.1038/s41598-020-58223-z
Publisher
Nature Publishing Group
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You, Chun-Yeol
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Department of Physics and Chemistry
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