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DC Field Value Language Katiyar, Ajit K. - Thai, Kean You - Yun, Won Seok - Lee, JaeDong - Ahn, Jong-Hyun - 2020-12-14T05:19:24Z - 2020-12-14T05:19:24Z - 2020-08-21 - 2020-07 -
dc.identifier.citation Science Advances, v.6, no.31, pp.eabb0576 -
dc.identifier.issn 2375-2548 -
dc.identifier.uri -
dc.description.abstract Silicon has been widely used in the microelectronics industry. However, its photonic applications are restricted to visible and partial near-infrared spectral range owing to its fundamental optical bandgap (1.12 eV). With recent advances in strain engineering, material properties, including optical bandgap, can be tailored considerably. This paper reports the strain-induced shrinkage in the Si bandgap, providing photosensing well beyond its fundamental absorption limit in Si nanomembrane (NM) photodetectors (PDs). The Si-NM PD pixels were mechanically stretched (biaxially) by a maximum strain of similar to 3.5% through pneumatic pressure-induced bulging, enhancing photoresponsivity and extending the Si absorption limit up to 1550 nm, which is the essential wavelength range of the lidar sensors for obstacle detection in self-driving vehicles. The development of deformable three-dimensional optoelectronics via gas pressure-induced bulging also facilitated the realization of unique device designs with concave and convex hemispherical architectures, which mimics the electronic prototypes of biological eyes. -
dc.language English -
dc.publisher American Association for the Advancement of Science -
dc.title Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering -
dc.type Article -
dc.identifier.doi 10.1126/sciadv.abb0576 -
dc.identifier.wosid 000556543100027 -
dc.identifier.scopusid 2-s2.0-85090072368 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.citation.publicationname Science Advances -
dc.contributor.nonIdAuthor Katiyar, Ajit K. -
dc.contributor.nonIdAuthor Thai, Kean You -
dc.contributor.nonIdAuthor Yun, Won Seok -
dc.contributor.nonIdAuthor Ahn, Jong-Hyun -
dc.identifier.citationVolume 6 -
dc.identifier.citationNumber 31 -
dc.identifier.citationStartPage eabb0576 -
dc.identifier.citationTitle Science Advances -
dc.type.journalArticle Article -
dc.description.isOpenAccess Y -
dc.subject.keywordPlus SILICON -
dc.subject.keywordPlus BANDGAP -
dc.subject.keywordPlus PHOTODIODE -
dc.contributor.affiliatedAuthor Katiyar, Ajit K. -
dc.contributor.affiliatedAuthor Thai, Kean You -
dc.contributor.affiliatedAuthor Yun, Won Seok -
dc.contributor.affiliatedAuthor Lee, JaeDong -
dc.contributor.affiliatedAuthor Ahn, Jong-Hyun -
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Department of Physics and Chemistry Light and Matter Theory Laboratory 1. Journal Articles


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