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Enhancement Mode Flexible SnO2Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

Title
Enhancement Mode Flexible SnO2Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach
Authors
Jang, BonghoKang, HongkiLee, Won-YongBae, Jin-HyukKang, In-ManKim, KwangeunKwon, Hyuk-JunJang, Jaewon
DGIST Authors
Kang, HongkiKwon, Hyuk-Jun
Issue Date
2020-07
Citation
IEEE Access, 8, 123013-123018
Type
Article
Article Type
Article
Author Keywords
Sol-gelSnO2UV/Ozonethin film transistorsenhancement mode
Keywords
OXIDE
ISSN
2169-3536
Abstract
The effect of ultraviolet/Ozone (UV/O3)-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films is investigated in this study. Via the UV/O3-assisted annealing processes, mixed-phase SnO2 films composed of amorphous SnO2 and polycrystalline SnO were obtained. Furthermore, the XPS spectra indicate an increase in the SnO2/SnO ratio and a substantial decrease in the number of -OH groups (serving as trap sites). This results in an increase in the conductivity and field-effect mobility of the films. The field-effect mobility of the UV/Ozone-assisted 300 °C-annealed SnO2 thin film transistor (TFT) increases considerably (by ∼ 500×), yielding a device with a field-effect mobility of 3.09 cm2/Vs. In addition, flexible SnO2 TFTs with Al2O3 insulator and Au gate on Polyimide substrate fabricated via gate electrode engineering shows a decreased conduction bandgap offset, compared to the SnO2 TFTs on SiO2, and enhancement mode operation properties (normally off at zero gate voltage) with a field-effect mobility of 1.87 cm2/Vs.
URI
http://hdl.handle.net/20.500.11750/12566
DOI
10.1109/ACCESS.2020.3007372
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kang Lab.1. Journal Articles
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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