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Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS(2)van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping

Title
Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS(2)van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping
Authors
Ra, Hyun-SooJeong, Min-HyeYoon, TaegeunKim, SeungsooSong, YoungJaeLee, Jong-Soo
DGIST Authors
Ra, Hyun-Soo; Jeong, Min-Hye; Yoon, Taegeun; Kim, Seungsoo; Song, YoungJae; Lee, Jong-Soo
Issue Date
2020-10
Citation
Advanced Science, 7(19), 2001475
Type
Article
Article Type
Article
Author Keywords
electrostatic dopingheterojunctionsnoise currentscanning photocurrent mappingtransition metal dichalcogenides
Keywords
2DHETEROSTRUCTUREBEHAVIORFEW-LAYER MOS2HEXAGONAL BORON-NITRIDEMONOLAYER MOS2MONO LAYERWSE2TRANSITIONGRAPHENE
ISSN
2198-3844
Abstract
Heterojunction structures using 2D materials are promising building blocks for electronic and optoelectronic devices. The limitations of conventional silicon photodetectors and energy devices are able to be overcome by exploiting quantum tunneling and adjusting charge balance in 2D p–n and n–n junctions. Enhanced photoresponsivity in 2D heterojunction devices can be obtained with WSe2 and BP as p-type semiconductors and MoS2 and WS2 as n-type semiconductors. In this study, the relationship between photocurrent and the charge balance of electrons and holes in van der Waals heterojunctions is investigated. To observe this phenomenon, a p-WSe2/n-WS2/n-MoS2 heterojunction device with both p–n and n–n junctions is fabricated. The device can modulate the charge carrier balance between heterojunction layers to generate photocurrent upon illumination by selectively applying electrostatic doping to a specific layer. Using photocurrent mapping, the operating transition zones for the device is demonstrated, allowing to accurately identify the locations where photocurrent generates. Finally, the origins of flicker and shot noise at the different semiconductor interfaces are analyzed to understand their effect on the photoresponsivity and detectivity of unit active area (2.5 µm2, λ = 405 nm) in the p-WSe2/n-WS2/n-MoS2 heterojunction device. © 2020 The Authors. Published by Wiley-VCH GmbH
URI
http://hdl.handle.net/20.500.11750/12671
DOI
10.1002/advs.202001475
Publisher
John Wiley and Sons Inc
Related Researcher
  • Author Lee, Jong-Soo MNEDL(Multifunctional Nanomaterials & Energy Devices Lab)
  • Research Interests Design of new type of multifunctional nanoparticles for energy-related devices; 다기능성 나노재료; 무기물 태양전지; 열전소자
Files:
Collection:
Department of Energy Science and EngineeringMNEDL(Multifunctional Nanomaterials & Energy Devices Lab)1. Journal Articles


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