DGIST Scholar: Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

DGIST ScholarDivision of Nanotechnology 1. Journal Articles

Cited 0 time in webofscience

webofscience

Cited 0 time in scopus

scopus

0 218 Export

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Title: Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Authors: Baek, I.G.; Lee, M.S.; Sco, S.; Lee, M.J.; Seo, D.H.; Suh, D.-S.; Park, J.C.; Park, S.O.; Kim, H.S.; Yoo, I.K.; Chung, U.-I.; Moon, J.T.

DGIST Authors: Baek, I.G.; Lee, M.S.; Sco, S.; Lee, M.J.; Seo, D.H.; Suh, D.-S.; Park, J.C.; Park, S.O.; Kim, H.S.; Yoo, I.K.; Chung, U.-I.; Moon, J.T.

Issue Date: 2004-12

Citation: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 587-590

Type: Article

URI: http://hdl.handle.net/20.500.11750/13458

DOI: 10.1109/iedm.2004.1419228

Publisher: IEEE

Related Researcher

Lee, Myoung-Jae
Research Interests

Files:

Collection:: Division of Nanotechnology 1. Journal Articles

Show Full Item Record

qrcode

mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

DGIST

Copyrights ⓒ 2016. Daegu Gyeongbuk Institute of Science & Technology All right reserved.

DGIST Scholar was built with support from the OAK distribution project by the National Library of Korea.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Library Services Team, DGIST 333. Techno Jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu, 42988, Republic of Korea.

RSS_1.0 RSS_2.0 ATOM_1.0

BROWSE

LIBRARY