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Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Title
Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
Authors
Baek, I.G.Lee, M.S.Sco, S.Lee, M.J.Seo, D.H.Suh, D.-S.Park, J.C.Park, S.O.Kim, H.S.Yoo, I.K.Chung, U.-I.Moon, J.T.
DGIST Authors
Baek, I.G.; Lee, M.S.; Sco, S.; Lee, M.J.; Seo, D.H.; Suh, D.-S.; Park, J.C.; Park, S.O.; Kim, H.S.; Yoo, I.K.; Chung, U.-I.; Moon, J.T.
Issue Date
2004-12
Citation
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 587-590
Type
Article
URI
http://hdl.handle.net/20.500.11750/13458
DOI
10.1109/iedm.2004.1419228
Publisher
IEEE
Related Researcher
Files:
There are no files associated with this item.
Collection:
Division of Nanotechnology1. Journal Articles


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