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Suppressed Degradation and Enhanced Performance of CsPbI3Perovskite Quantum Dot Solar Cells via Engineering of Electron Transport Layers
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Title
Suppressed Degradation and Enhanced Performance of CsPbI3Perovskite Quantum Dot Solar Cells via Engineering of Electron Transport Layers
Issued Date
2021-02
Citation
Lim, Sung Jun. (2021-02). Suppressed Degradation and Enhanced Performance of CsPbI3Perovskite Quantum Dot Solar Cells via Engineering of Electron Transport Layers. ACS Applied Materials & Interfaces, 13(5), 6119–6129. doi: 10.1021/acsami.0c15484
Type
Article
Author Keywords
CsPbI3 perovskite quantum dotscolloidal quantum dotsphase stabilitysolar cellselectron transport layers
Keywords
Nanostructured materialsOpen circuit voltagePerovskitePhotocatalytic activityPhotocurrentsQuantum chemistrySemiconductor quantum dotsSolar cellsTiO2 nanoparticlesTitanium dioxideAmbient conditionsDevice stabilityElectron transport layersLight-harvestingOperational stabilityPhotocurrent densityPower conversion efficienciesQuantum dot solar cellsLead compoundsCell engineeringChlorine compoundsConversion efficiencyElectron transport propertiesNanocrystals
ISSN
1944-8244
Abstract
CsPbI3 perovskite quantum dots (CsPbI3-PQDs) have recently come into focus as a light-harvesting material that can act as a platform through which to combine the material advantages of both perovskites and QDs. However, the low cubic-phase stability of CsPbI3-PQDs in ambient conditions has been recognized as a factor that inhibits device stability. TiO2 nanoparticles are the most regularly used materials as an electron transport layer (ETL) in CsPbI3-PQD photovoltaics; however, we found that TiO2 can facilitate the cubic-phase degradation of CsPbI3-PQDs due to its vigorous photocatalytic activity. To address these issues, we have developed chloride-passivated SnO2 QDs (Cl@SnO2 QDs), which have low photocatalytic activity and few surface traps, to suppress the cubic-phase degradation of CsPbI3-PQDs. Given these advantages, the CsPbI3-PQD solar cells based on Cl@SnO2 ETLs show significantly improved device operational stability (under conditions of 50% relative humidity and 1-sun illumination), compared to those based on TiO2 ETLs. In addition, the Cl@SnO2-based devices showed improved open circuit voltage and photocurrent density, resulting in enhanced power conversion efficiency (PCE) up to 14.5% compared to that of TiO2-based control devices (PCE of 13.8%). © 2021 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/13500
DOI
10.1021/acsami.0c15484
Publisher
American Chemical Society
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최종민
Choi, Jongmin최종민

Department of Energy Science and Engineering

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