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Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상

Title
Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상
Translated Title
Improvement of Cu2ZnSnS4 Solar Cell Characteristics with Zn(O-x,S1-x) Buffer Layer
Authors
Yang, Kee-JeongSim, Jun-HyoungSon, Dae-HoLee, Sang-JuKim, Young-IllYoon, Do-Young
DGIST Authors
Yang, Kee-Jeong; Sim, Jun-Hyoung; Son, Dae-Ho; Lee, Sang-Ju; Kim, Young-Ill; Yoon, Do-Young
Issue Date
2017-02
Citation
Korean Chemical Engineering Research, 55(1), 93-98
Type
Article
Author Keywords
Solar cellCZTSBuffer layerOpen circuit voltageCurrent density
Keywords
EFFICIENCYFILMPERFORMANCEINTERFACESENERGYZN(O
ISSN
0304-128X
Abstract
This experiment investigated characteristic changes in a Cu2ZnSnS4 (CZTS) solar cell by applying a Zn (O-x, S1-x) butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as Zn(O-0.76, S-0.24), Zn(O-0.56, S-0.44), Zn(O-0.33, S-0.67), and Zn(O-0.17, S-0.83), the Zn(O-0.76, S-0.24) buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the Zn(O-0.76, S-0.24) buffer layer to the device, the buffer layer in the device showed the composition of Zn(O-0.7, S-0.3) because S diffused into the buffer layer from the absorber layer. The Zn(O-0.7, S-0.3) buffer layer, having a lower energy level (E-V) than a CdS buffer layer, improved the J(SC) and V-OC characteristics of the CZTS solar cell because the Zn(O-0.7, S-0.3) buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the Zn(O-0.7, S-0.3) buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.
URI
http://hdl.handle.net/20.500.11750/13703
DOI
10.9713/kcer.2017.55.1.93
Publisher
Korean Institute of Chemical Engineers
Related Researcher
Files:
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Collection:
Division of Energy Technology1. Journal Articles


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