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dc.contributor.author Ha, Jae-Hyun -
dc.contributor.author Kim, Hyung-Wook -
dc.contributor.author Jo, Young-Sik -
dc.contributor.author Kim, Seog-Whan -
dc.contributor.author Hong, Jung-Il -
dc.date.accessioned 2021-07-15T20:07:55Z -
dc.date.available 2021-07-15T20:07:55Z -
dc.date.created 2021-03-04 -
dc.date.issued 2021-03 -
dc.identifier.citation Applied Materials Today, v.22, pp.100984 -
dc.identifier.issn 2352-9407 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/13867 -
dc.description.abstract Current understanding of the metal-insulator transition (MIT) of V2O3 based on the electronic band structures states that the electrical properties of V2O3 are extremely sensitive to the crystallographic structures. In the present report, we present the systematic tuning of the MIT characteristics through the control of crystallographic structure of the polycrystalline V2O3 thin film. Both crystallographic textures and the residual strains due to the presence of controlled amount of stacking faults in the films could be adjusted with the proper control of deposition conditions and the corresponding changes in the electrical properties have be tracked to establish the tunability of MIT temperature as well as the transition rates. Observed change was understood with the consideration of electronic band structures, through which the effect of atomic distances to the electron band gap was demonstrated. Additionally, it was found that the lattice strain of a strongly textured V2O3 influences both room temperature resistivity and MIT temperature. © 2021 Elsevier Ltd -
dc.language English -
dc.publisher Elsevier BV -
dc.title Tunable metal-insulator transition of V2O3 thin films strained by controlled inclusion of crystallographic defect -
dc.type Article -
dc.identifier.doi 10.1016/j.apmt.2021.100984 -
dc.identifier.wosid 000627157700001 -
dc.identifier.scopusid 2-s2.0-85101306045 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.citation.publicationname Applied Materials Today -
dc.contributor.localauthor Ha, Jae-Hyun -
dc.contributor.localauthor Kim, Hyung-Wook -
dc.contributor.localauthor Jo, Young-Sik -
dc.contributor.localauthor Kim, Seog-Whan -
dc.contributor.localauthor Hong, Jung-Il -
dc.contributor.nonIdAuthor Ha, Jae-Hyun -
dc.contributor.nonIdAuthor Kim, Hyung-Wook -
dc.contributor.nonIdAuthor Jo, Young-Sik -
dc.contributor.nonIdAuthor Kim, Seog-Whan -
dc.identifier.citationVolume 22 -
dc.identifier.citationStartPage 100984 -
dc.identifier.citationTitle Applied Materials Today -
dc.description.isOpenAccess N -
dc.subject.keywordAuthor Metal-insulator transition -
dc.subject.keywordAuthor Vanadium sesquioxide -
dc.subject.keywordAuthor Crystallography -
dc.subject.keywordAuthor Texture -
dc.subject.keywordAuthor Lattice parameter -
dc.subject.keywordAuthor Electrical property -
dc.subject.keywordPlus Crystallographic textures -
dc.subject.keywordPlus Deposition conditions -
dc.subject.keywordPlus Electronic band structure -
dc.subject.keywordPlus Residual strains -
dc.subject.keywordPlus Room-temperature resistivity -
dc.subject.keywordPlus Transition rates -
dc.subject.keywordPlus Metal insulator transition -
dc.subject.keywordPlus Energy gap -
dc.subject.keywordPlus Metal insulator boundaries -
dc.subject.keywordPlus Semiconductor insulator boundaries -
dc.subject.keywordPlus Strain -
dc.subject.keywordPlus Textures -
dc.subject.keywordPlus Thin films -
dc.subject.keywordPlus Crystallographic defects -
dc.subject.keywordPlus Crystallographic structure -

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