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A study for the impact ionization in the oxide semiconductor system

Title
A study for the impact ionization in the oxide semiconductor system
Authors
Lee, Hyeon-JunAbe, Katsumi
DGIST Authors
Lee, Hyeon-Jun
Issue Date
2019-09-18
Citation
2019 E-MRS Fall Meeting and Exhibit
Type
Conference
URI
http://hdl.handle.net/20.500.11750/14308
Publisher
European Materials Research Society
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
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Collection:
Division of Nanotechnology2. Conference Papers


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