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The analysis of device degradation while being driven in the oxide semiconductor

Title
The analysis of device degradation while being driven in the oxide semiconductor
Authors
Hyeon-Jun Lee
DGIST Authors
Hyeon-Jun Lee
Issue Date
2018-04-26
Citation
International Advances in Applied Physics & Materials Science Congress and Exhibition (APMAS 2018), 18-18
Type
Conference
Abstract
Oxide semiconductors as the active layer have attracted much attention for various applications including display due to their high electrical and optical characteristics available. Indeed, InGaZnO, as a representative, has been adopted as an active material in the backplane of high-resolution display in mass production since 2012. Here we report the device instability under the AC bias stress on the drain of thin-film transistors (TFT) which may be one of the main origins of the failure of integrated circuits (providing the control signal for the gate in the active matrix). The effects of the driving frequency, pulse shape and the strength of lateral electric field as well as the channel current are investigated. This investigation reports that the device degradation is accelerated drastically by transient current such as the pulse shape and frequency as well as the the strength of the lateral electric field. The variation of the current profiles based on test conditions is related to the generation of local defect states in the oxide material; this generation could be caused by the structural change of the material. We believe that these findings should be considered for the reliable design of integrated circuits which consist of oxide semiconductor TFTs, such as gate driver circuits in the active-matrix display device.
URI
http://hdl.handle.net/20.500.11750/15028
Publisher
International Advances in Applied Physics & Materials Science Congress and Exhibition
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
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Collection:
Division of Nanotechnology2. Conference Papers


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