Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Sanghyun | - |
dc.contributor.author | Price, Kent J. | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.date.accessioned | 2021-10-15T08:30:06Z | - |
dc.date.available | 2021-10-15T08:30:06Z | - |
dc.date.created | 2021-07-29 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.issn | 0038-092X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/15530 | - |
dc.description.abstract | We have fabricated CZTSSe solar cells with H2S sulfo-selenization processes and investigated the electronic structure at the PN hetero- and back contact junctions by impedance spectroscopy. By decoupling each junction's impedance spectroscopic responses, we systematically characterized the built-in potential of two local junction interfaces. A developed equivalent circuit model has been optimized for decoupling each junction's property at different frequency bands. Modeling and numerical simulations were conducted with the in-house MATLAB modeling suites connected to external simulators of Sentaurus TCAD and LEVM/LEVMW software to estimate the impact of each junction component to impedance spectra. The optimized model is comprised of a parallel circuit combination with resistance and capacitor-like elements (constant phase elements), connected to one inductive element. The conversion efficiency of CZTSSe devices is 6.2% with bandgap energy 1.13 eV based on external quantum efficiency measurements. From the equivalent circuit model, the built-in potential of the hetero-junction is characterized as 956 meV, which is ~3% smaller than an ideal case from TCAD, 987 meV. Conversely, the built-in potential of the back contact junction is 476 meV. The apparent built-in potential is estimated as 480 meV from the Mott-Schottky equation. © 2021 | - |
dc.language | English | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.title | Two local built-in potentials of H2S processed CZTSSe by complex impedance spectroscopy | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.solener.2021.06.064 | - |
dc.identifier.wosid | 000688293000003 | - |
dc.identifier.scopusid | 2-s2.0-85109873549 | - |
dc.identifier.bibliographicCitation | Solar Energy, v.225, pp.11 - 18 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | Back contact junction | - |
dc.subject.keywordAuthor | Built-in potential | - |
dc.subject.keywordAuthor | CZTSSe | - |
dc.subject.keywordAuthor | Hetero-junction | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordAuthor | Spectroscopy | - |
dc.subject.keywordPlus | SILICON SOLAR-CELLS | - |
dc.subject.keywordPlus | DEVICE CHARACTERISTICS | - |
dc.subject.keywordPlus | EQUIVALENT-CIRCUIT | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ADMITTANCE | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MODEL | - |
dc.citation.endPage | 18 | - |
dc.citation.startPage | 11 | - |
dc.citation.title | Solar Energy | - |
dc.citation.volume | 225 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.type.docType | Article | - |
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