Cited 0 time in webofscience Cited 0 time in scopus

Ferroelectrics based on hfo2 film

Title
Ferroelectrics based on hfo2 film
Authors
Song, ChongmyeongKwon, Hyuk-Jun
DGIST Authors
Song, Chongmyeong; Kwon, Hyuk-Jun
Issue Date
2021-11
Citation
Electronics, 10(22)
Type
Article
Author Keywords
FerroelectricsHafnium oxideNegative capacitanceNVM
Keywords
CHEMICAL SOLUTION DEPOSITIONNEGATIVE CAPACITANCEHAFNIUM OXIDEPOLARIZATIONFUTUREFIELDELECTRORESISTANCETRANSISTORENDURANCE
ISSN
2079-9292
Abstract
The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO2 by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO2-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO2 film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET). © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
URI
http://hdl.handle.net/20.500.11750/15840
DOI
10.3390/electronics10222759
Publisher
MDPI AG
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
Collection:
Department of Electrical Engineering and Computer ScienceAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


qrcode mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE