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High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

Title
High performance, transparent a-IGZO TFTs on a flexible thin glass substrate
Author(s)
Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Kim, JH[Kim, Jung-Hye]Jeong, SM[Jeong, Soon Moon]Jang, JE[Jang, Jae Eun]Jeong, J[Jeong, Jaewook]
DGIST Authors
Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Kim, JH[Kim, Jung-Hye]Jeong, SM[Jeong, Soon Moon]Jang, JE[Jang, Jae Eun]Jeong, J[Jeong, Jaewook]
Issued Date
2014-03
Type
Article
Article Type
Article
Subject
A-IGZOA-InGaZnOBendingBias StressThin-Film Transistors (TFTs)Thin Glass Substrate
ISSN
0268-1242
Abstract
We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate. © 2014 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/1589
DOI
10.1088/0268-1242/29/3/035003
Publisher
Institute of Physics Publishing

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