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메모리 셀 유닛, 스위칭 저항 메모리 소자 및 이를 포함하는 뇌신경모사 소자

Title
메모리 셀 유닛, 스위칭 저항 메모리 소자 및 이를 포함하는 뇌신경모사 소자
Translated Title
MEMORY CELL UNIT, SWITCHING RESISTANCE MEMORY DEVICE AND NEUROMORPHIC DEVICE INCLUDING THE SAME
Inventors
곽진석노희연이현준최규진
DGIST Inventors
곽진석; 노희연; 이현준; 최규진
Country
KO
Application Date
2018-10-31
Application No.
10-2018-0131714
Registration Date
2021-12-17
Registration No.
10-2342308
Assignee
(재)대구경북과학기술원(50/50),영남대학교 산학협력단(50/50)
URI
http://hdl.handle.net/20.500.11750/16026
https://doi.org/10.8080/1020180131714 [KIPRIS]
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
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Collection:
Division of Nanotechnology3. Patents


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