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Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

Title
Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment
Author(s)
Lee, SunghunPark, Jung-BongLee, Myoung-JaeBoland, John J.
Issued Date
2016-12
Citation
AIP Advances, v.6, no.12
Type
Article
Keywords
AnnealingARRAYSData Storage EquipmentDevice TechnologiesDEVICESZinc OxideDigital StorageElectronicsHydrogen AnnealingHydrogen Annealing TreatmentMemORYMemory CapabilitiesMemristive BehaviorMemristorsMETALNANODEVICESNanowiresNegative Differential ResistancesNeuromorphic SystemsNon-Volatile Memory Technology
ISSN
2158-3226
Abstract
In non-volatile memory technology, various attempts to overcome both technology and physical limits have led to development of neuromorphic devices like memristors. Moreover, multilevel resistance and the potential for enhanced memory capability has attracted much attention. Here, we report memristive characteristics and multilevel resistance in a hydrogen annealed ZnO nanowire device. We find that the memristive behavior including negative differential resistance arises from trapped electrons in an amorphous ZnO interfacial layer at the injection electrode that is formed following hydrogen annealing. Furthermore, we demonstrate that it is possible to control electrons trapping and detrapping by the controlled application of voltage pulses to establish a multilevel memory. These results could pave the way for multifunctional memory device technology such as the artificial neuromorphic system. © 2016 Author(s).
URI
http://hdl.handle.net/20.500.11750/1604
DOI
10.1063/1.4971820
Publisher
American Institute of Physics Publishing
Related Researcher
  • 이성훈 Lee, Sunghun
  • Research Interests Nanomaterials; 나노물질; Nanostructures; 나노구조; Topological matters; 위상물질; 2D materials; 2차원 물질; Strain sensor; 스트레인 센서
Files in This Item:
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000392091500033.pdf

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Appears in Collections:
Division of Nanotechnology 1. Journal Articles

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