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Hole doping effect of MoS2 via electron capture of He+ ion irradiation
- Title
- Hole doping effect of MoS2 via electron capture of He+ ion irradiation
- Authors
- Han, Sang Wook; Yun, Won Seok; Kim, Hyesun; Kim, Yanghee; Kim, D.-H.; Ahn, Chang Won; Ryu, Sunmin
- DGIST Authors
- Han, Sang Wook; Yun, Won Seok; Kim, Hyesun; Kim, Yanghee; Kim, D.-H.; Ahn, Chang Won; Ryu, Sunmin
- Issue Date
- 2021-12
- Citation
- Scientific Reports, 11(1)
- Type
- Article
- Keywords
- MONOLAYER MOS2; THIN-FILMS; ENERGY; PHOTOLUMINESCENCE; LAYERS; STATE
- ISSN
- 2045-2322
- Abstract
- Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He+ ion irradiation is valid for supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He+ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He+ ion irradiation. © 2021, The Author(s).
- URI
- http://hdl.handle.net/20.500.11750/16055
- DOI
- 10.1038/s41598-021-02932-6
- Publisher
- Nature Publishing Group
- Files:
-
- Collection:
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