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Hole doping effect of MoS2 via electron capture of He+ ion irradiation

Title
Hole doping effect of MoS2 via electron capture of He+ ion irradiation
Authors
Han, Sang WookYun, Won SeokKim, HyesunKim, YangheeKim, D.-H.Ahn, Chang WonRyu, Sunmin
DGIST Authors
Han, Sang Wook; Yun, Won Seok; Kim, Hyesun; Kim, Yanghee; Kim, D.-H.; Ahn, Chang Won; Ryu, Sunmin
Issue Date
2021-12
Citation
Scientific Reports, 11(1)
Type
Article
Keywords
MONOLAYER MOS2THIN-FILMSENERGYPHOTOLUMINESCENCELAYERSSTATE
ISSN
2045-2322
Abstract
Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He+ ion irradiation is valid for supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He+ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He+ ion irradiation. © 2021, The Author(s).
URI
http://hdl.handle.net/20.500.11750/16055
DOI
10.1038/s41598-021-02932-6
Publisher
Nature Publishing Group
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