Title

Vertical Thin Film Transistor employing micro-hole array structure in a metal electrode

DGIST Authors

Gyeonghyeon Choi ; Jae Eun Jang ; Hongki Kang

Advisor

장재은

Co-Advisor(s)

Hongki Kang

Issued Date

2022

Awarded Date

2022/02

Citation

Gyeonghyeon Choi. (2022). Vertical Thin Film Transistor employing micro-hole array structure in a metal electrode. doi: 10.22677/thesis.200000595445

Type

Thesis

Subject

Vertical TFT, Micro-hole array, IGZO TFT, Schottky diode, PN-heterojunction

Description

Vertical TFT, Micro-hole array, IGZO TFT, Schottky diode, PN-heterojunction

Table Of Contents

Ⅰ. INTRODUCTION 1
1.1 Background of TFT 1
1.1.1 Structure and operation principle 1
1.1.2 Various channel materials 3
1.2 Vertical TFT 6
1.2.1 Background of vertical TFT 6
Ⅱ. EXPERIMENTAL 16
2.1 Fabrication of metal micro-hole array vertical TFT 16
2.1.1 Metal micro-hole array with oxide passivation layer 20
2.1.2 Metal micro-hole array with PN passivation layer 23
Ⅲ. ELECTRICAL CHARACTERISTICS OF METAL MICRO-HOLE ARRAY VERTICAL TFT 26
3.1 Source metal with Ohmic or Schottky contact 26
3.2 Drain metal with Ohmic or Schottky contact 39
3.3 Characteristic change according to size or thickness 45
Ⅳ. ELECTRICAL CHARACTERISTICS DEPENDING ON VERTICAL TFT STRUCTURE 51
4.1 Metal micro-hole array with oxide passivation layer 51
4.2 Metal micro-hole array with PN passivation layer 56
Ⅴ. CONCLUSION 63

URI

http://dgist.dcollection.net/common/orgView/200000595445
http://hdl.handle.net/20.500.11750/16346

DOI

10.22677/thesis.200000595445

Degree

Master

Department

Information and Communication Engineering

Publisher

DGIST

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