Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Baek, Seungho | - |
dc.contributor.author | Kim, Junil | - |
dc.contributor.author | Choo, Sooho | - |
dc.contributor.author | Sen, Anamika | - |
dc.contributor.author | Jang, Bongho | - |
dc.contributor.author | Pujar, Pavan | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.date.accessioned | 2022-07-06T02:32:55Z | - |
dc.date.available | 2022-07-06T02:32:55Z | - |
dc.date.created | 2022-04-20 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/16479 | - |
dc.description.abstract | Molybdenum disulfide (MoS2) synthesis methods have become diverse and enable wafer-scale growth for high-performance optoelectronic applications. However, there has been limited research on the carrier transports of wafer-scale deposited MoS2 thin-film transistors (TFTs). In this paper, the first demonstration of the electron transport mechanism in top-gated polycrystalline crystalline MoS2 (poly-MoS2) TFTs grown by a wafer-scale deposition method is presented. The MoS2 is synthesized via radio frequency (RF) magnetron sputtering and gas flow chemical vapor sulfurization. A surface analysis is performed to determine the basic ingredients and grain size of the grown MoS2. Furthermore, the electrical properties and charge transport behaviors of the poly-MoS2 TFTs are characterized using current–voltage measurement at low temperatures (93–273 K). The extracted parameters (e.g., field-effect mobility, contact and channel resistance, activation energy, and hopping distance) and 2D Mott variable range hopping (VRH) of the poly-MoS2 TFTs support the notion that the primary mechanism of carrier transport in the poly-MoS2 TFTs involves thermally active hopping and grain effects. For advanced poly-MoS2-based devices, an increase of grain size will be the principal factor using the relationship between the grain size and electron hopping distance of poly-MoS2. © 2022 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Low-Temperature Carrier Transport Mechanism of Wafer-Scale Grown Polycrystalline Molybdenum Disulfide Thin-Film Transistor Based on Radio Frequency Sputtering and Sulfurization | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/admi.202102360 | - |
dc.identifier.wosid | 000778803400001 | - |
dc.identifier.scopusid | 2-s2.0-85127478165 | - |
dc.identifier.bibliographicCitation | Advanced Materials Interfaces, v.9, no.15 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | grains | - |
dc.subject.keywordAuthor | low-temperature characterizations | - |
dc.subject.keywordAuthor | molybdenum disulfides | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | carrier transports | - |
dc.subject.keywordPlus | MOS2 ATOMIC LAYERS | - |
dc.subject.keywordPlus | VAPOR-PHASE GROWTH | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.citation.number | 15 | - |
dc.citation.title | Advanced Materials Interfaces | - |
dc.citation.volume | 9 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
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