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Stable Correlated 4d(2) SrMoO3 Films Epitaxially Coated on Al2O3 for Electromagnetic Shielding and Transparent Conductors
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dc.contributor.author Ha, Youngkyoung -
dc.contributor.author Lee, Shinbuhm -
dc.date.accessioned 2022-11-01T13:00:06Z -
dc.date.available 2022-11-01T13:00:06Z -
dc.date.created 2022-09-23 -
dc.date.issued 2022-11 -
dc.identifier.issn 2196-7350 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/17009 -
dc.description.abstract Correlated perovskites have attracted significant attention worldwide for their potential application in transparent conductors. However, most studies in this area have focused on single-crystalline films grown on expensive perovskites. In this study, the transparent conducting properties of SrMoO3 epitaxial films grown on Al2O3, the most commonly used substrate for optoelectronics, are investigated. The 45−80-nm-thick SrMoO3 epitaxial films on (Formula presented.) -oriented Al2O3 exhibit low sheet resistance (< 50 Ω □−1) at room temperature and high ultraviolet-visible transmittances (> 60%), comparable with the values expected from single-crystalline films. The highly conductive properties induced by two electrons in the outermost 4d orbitals guarantee a high electromagnetic shielding effectiveness of approximately 28.5 dB at 10 GHz in the X-band. The SrMoO3 films are thermally stable below 450 °C in air and 700 °C in vacuum. Taken together, these results indicate that SrMoO3 epitaxial films grown on (Formula presented.) Al2O3 can be highly promising for optoelectronic applications in extreme environments. © 2022 Wiley-VCH GmbH. -
dc.language English -
dc.publisher Wiley -
dc.title Stable Correlated 4d(2) SrMoO3 Films Epitaxially Coated on Al2O3 for Electromagnetic Shielding and Transparent Conductors -
dc.type Article -
dc.identifier.doi 10.1002/admi.202200893 -
dc.identifier.wosid 000853576900001 -
dc.identifier.scopusid 2-s2.0-85137895104 -
dc.identifier.bibliographicCitation Ha, Youngkyoung. (2022-11). Stable Correlated 4d(2) SrMoO3 Films Epitaxially Coated on Al2O3 for Electromagnetic Shielding and Transparent Conductors. Advanced Materials Interfaces, 9(31). doi: 10.1002/admi.202200893 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Al -
dc.subject.keywordAuthor O-2 -
dc.subject.keywordAuthor (3) -
dc.subject.keywordAuthor correlated perovskites -
dc.subject.keywordAuthor electromagnetic shielding effectiveness -
dc.subject.keywordAuthor epitaxial films -
dc.subject.keywordAuthor thermal stability -
dc.subject.keywordAuthor transparent conductors -
dc.citation.number 31 -
dc.citation.title Advanced Materials Interfaces -
dc.citation.volume 9 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Materials Science -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Materials Science, Multidisciplinary -
dc.type.docType Article -
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이신범
Lee, Shinbuhm이신범

Department of Physics and Chemistry

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