DGIST ScholarDepartment of Information and Communication EngineeringCSP(Communication and Signal Processing) Lab2. Conference Papers
Asymmetric tunneling metal-insulator-metal diode for high frequency application
- Title
- Asymmetric tunneling metal-insulator-metal diode for high frequency application
- DGIST Authors
- Shin, Jeong Hee; Im, Jae Han; Shin, Sang Sik; Choi, In Ho; Choi, Ji Woong; Jang, Jae Eun
- Issue Date
- 2012
- Citation
- 37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
- Type
- Conference
- Article Type
- Conference Paper
- ISBN
- 9780000000000
- ISSN
- 2162-2027
- Abstract
- To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency. © 2012 IEEE.
- Publisher
- Institute of Electrical and Electronics Engineers
- Related Researcher
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Jang, Jae Eun Advanced Electronic Devices Research Group(AEDRG)
- Research Interests Nanoelectroinc device; 생체 신호 센싱 시스템 및 생체 모방 디바이스; 나노 통신 디바이스
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