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Asymmetric tunneling metal-insulator-metal diode for high frequency application

Title
Asymmetric tunneling metal-insulator-metal diode for high frequency application
Authors
Shin, Jeong HeeIm, Jae HanShin, Sang SikChoi, In HoChoi, Ji WoongJang, Jae Eun
DGIST Authors
Shin, Jeong Hee; Im, Jae Han; Shin, Sang Sik; Choi, In Ho; Choi, Ji WoongJang, Jae Eun
Issue Date
2012
Citation
37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
2162-2027
Abstract
To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency. © 2012 IEEE.
URI
http://hdl.handle.net/20.500.11750/1787
DOI
10.1109/IRMMW-THz.2012.6380215
Publisher
Institute of Electrical and Electronics Engineers
Related Researcher
  • Author Jang, Jae Eun Advanced Electronic Devices Research Group(AEDRG)
  • Research Interests Nanoelectroinc device; 생체 신호 센싱 시스템 및 생체 모방 디바이스; 나노 통신 디바이스
Files:
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Collection:
Department of Information and Communication EngineeringCSP(Communication and Signal Processing) Lab2. Conference Papers
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)2. Conference Papers


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