Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Mun, Ki-Yeung | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Lim, Byoung-Yong | - |
dc.contributor.author | Kim, Sunjung | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.available | 2017-07-05T08:53:05Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2014-07-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2387 | - |
dc.description.abstract | N-incorporated Ru films were deposited by atomic layer deposition (ALD) at a deposition temperature of 270 °C using 1-isopropyl-4-methylbenzene- cyclohexa-1,3-dienyl ruthenium and N2/H2 mixture plasma as the precursor and reactant, respectively. The N content in the ALD-Ru films was controlled by changing the gas ratio [N2 versus the total gas (N2 + H2) flow rates] in the reactant from 0.82 to 1. Secondary ion mass spectrometry depth profiling revealed an increase in N content in the film with increasing gas ratio. The amount of N in the ALD-Ru films had a considerable effect on the film properties, such as resistivity, crystallinity and microstructure. Although the resistivity of the pure ALD-Ru film was ∼ 19 μΩ cm, the N-incorporated ALD-Ru films deposited with a gas ratio of 0.86 (N/Ru: ∼ 0.38) showed a resistivity of ∼ 340 μΩ cm, which increased continuously with increasing gas ratio. X-ray and electron diffraction revealed degradation in film crystallinity and decrease in grain size with increasing N incorporation into ALD-Ru films. Transmission electron microscopy showed that N-incorporated ALD-Ru films formed nanocrystalline and non-columnar grain structures. This is in contrast to that observed in the pure ALD-Ru film, which had a polycrystalline columnar grain structure. The growth rate of a representative N-incorporated Ru film deposited with a gas ratio of 0.86 showed a linear dependency on the number of ALD cycles; growth rate of 0.051 nm/cycle at short incubation cycles of ∼ 3. The step coverage was approximately 98% over the trench structure (aspect ratio: 4.5) with a top opening width of 25 nm. The direct plating of Cu on an optimized N-incorporated ALD-Ru film (5 nm in thickness) was possible. The structure of Cu (80 nm)/N-incorporated ALD-Ru (8 nm)/Si was found to be stable without the formation of copper silicide after annealing at 600 °C for 30 min. © 2014 Elsevier B.V. | - |
dc.publisher | Elsevier | - |
dc.title | The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2014.03.088 | - |
dc.identifier.scopusid | 2-s2.0-84901765555 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.562, pp.118 - 125 | - |
dc.subject.keywordAuthor | N-incorporated Ru | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | N-2/H-2 plasma | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Step coverage | - |
dc.subject.keywordAuthor | Cu metallization | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.subject.keywordAuthor | Seed layer | - |
dc.subject.keywordPlus | COPPER INTERCONNECTS | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | REACTANT | - |
dc.citation.endPage | 125 | - |
dc.citation.startPage | 118 | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 562 | - |
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