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dc.contributor.authorHong, Tae Runko
dc.contributor.authorJung, Jae Hunko
dc.contributor.authorYeo, Seung Minko
dc.contributor.authorCheon, Tae Hoonko
dc.contributor.authorBae, Soikko
dc.contributor.authorKim, Soo Hyunko
dc.contributor.authorYeo, So Jeongko
dc.contributor.authorKim, Hyo Sukko
dc.contributor.authorChung, Taek Moko
dc.contributor.authorPark, Bo Keunko
dc.contributor.authorKim, Chang Gyounko
dc.contributor.authorLee, Do Joongko
dc.date.available2017-07-11T06:11:37Z-
dc.date.created2017-04-20-
dc.date.created2017-04-20-
dc.date.issued2015-
dc.identifier.citationJournal of Physical Chemistry C, v.119, no.3, pp.1548 - 1556-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/2963-
dc.description.abstractTernary and amorphous tungsten silicon nitride (W-Si-N) thin films were grown by atomic layer deposition (ALD) using a sequential supply of a new fluorine-free, silylamide-based W metallorganic precursor, bis(tert-butylimido)bis(bis(trimethylsilylamido))tungsten(VI) [W(NtBu)2{N(SiMe3)2}2], and H2 plasma at a substrate temperature of 300 °C. Here, W(NtBu)2{N(SiMe3)2}2 was prepared through a metathesis reaction of W(NtBu)2Cl2(py)2 (py = pyridine) with 2 equiv of LiN(SiMe3)2 [Li(btsa)]. The newly proposed ALD system exhibited typical ALD characteristics, such as self-limited film growth and linear dependency of the film growth on the number of ALD cycles, and showed a high growth rate of 0.072 nm/cycle on a thermally grown SiO2 substrate with a nearly zero incubation cycle. Such ideal ALD growth characteristics enabled excellent step coverage of ALD-grown W-Si-N film, ∼100%, onto nanotrenches with a width of 25 nm and an aspect ratio ∼4.5. Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy analysis confirmed that the incorporated Si and W were mostly bonded to N, as in Si-N and W-N chemical bonds. The film kept its amorphous nature until annealing at 800 °C, and crystallization happened at local areas after annealing at a very high temperature of 900 °C. An ultrathin (only ∼4 nm thick) ALD-grown W-Si-N film effectively prevented diffusion of Cu into Si after annealing at a temperature up to 600 °C. © 2014 American Chemical Society.-
dc.publisherAmerican Chemical Society-
dc.titleHighly conformal amorphous W-Si-N thin films by plasma-enhanced atomic layer deposition as a diffusion barrier for Cu metallization-
dc.typeArticle-
dc.identifier.doi10.1021/jp510226g-
dc.identifier.wosid000348491900033-
dc.identifier.scopusid2-s2.0-84921468364-
dc.type.localArticle(Overseas)-
dc.type.rimsART-
dc.description.journalClass1-
dc.contributor.nonIdAuthorHong, Tae Run-
dc.contributor.nonIdAuthorJung, Jae Hun-
dc.contributor.nonIdAuthorYeo, Seung Min-
dc.contributor.nonIdAuthorBae, Soik-
dc.contributor.nonIdAuthorKim, Soo Hyun-
dc.contributor.nonIdAuthorYeo, So Jeong-
dc.contributor.nonIdAuthorKim, Hyo Suk-
dc.contributor.nonIdAuthorChung, Taek Mo-
dc.contributor.nonIdAuthorPark, Bo Keun-
dc.contributor.nonIdAuthorKim, Chang Gyoun-
dc.contributor.nonIdAuthorLee, Do Joong-
dc.identifier.citationVolume119-
dc.identifier.citationNumber3-
dc.identifier.citationStartPage1548-
dc.identifier.citationEndPage1556-
dc.identifier.citationTitleJournal of Physical Chemistry C-
dc.type.journalArticleArticle-
dc.description.isOpenAccessN-
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