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dc.contributor.author Jeong, J[Jeong, Jaewook] ko
dc.contributor.author Kim, J[Kim, Joonwoo] ko
dc.contributor.author Jeong, SM[Jeong, Soon Moon] ko
dc.date.available 2017-07-11T06:15:36Z -
dc.date.created 2017-04-10 -
dc.date.issued 2014-11 -
dc.identifier.citation IEEE Transactions on Electron Devices, v.61, no.11, pp.3757 - 3761 -
dc.identifier.issn 0018-9383 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3012 -
dc.description.abstract In this paper, we investigated the variations in electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors using a gated-multiprobe method when additional probe electrodes are on the back-channel region. We found that the resistance of the probe region is much smaller than that of the nonprobe region, which can be modeled by a series connection of transistors and resistors indicating that the probe region is independent of V GS and induces a decrease in effective channel length. We also performed technology computer aided design (TCAD) simulations and found that the effective channel length decreases and drain current increases, which is consistent with the experiments. © 2014 IEEE. -
dc.publisher Institute of Electrical and Electronics Engineers Inc. -
dc.subject Amorphous Indium-Gallium-Zinc-Oxide (A-IGZO) -
dc.subject Back Electrode -
dc.subject Channel Potential -
dc.subject Gated-Multiprobe (GMP) -
dc.subject Multiprobes -
dc.subject Thin-Film Transistor (TFT) -
dc.subject Thin-Film Transistors (TFTs) -
dc.title Novel Gated-Multiprobe Method for Measuring a Back Electrode Effect in Amorphous Oxide-Based Thin-Film Transistors -
dc.type Article -
dc.identifier.doi 10.1109/TED.2014.2359964 -
dc.identifier.wosid 000344544200026 -
dc.identifier.scopusid 2-s2.0-84908460132 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.identifier.citationVolume 61 -
dc.identifier.citationNumber 11 -
dc.identifier.citationStartPage 3757 -
dc.identifier.citationEndPage 3761 -
dc.identifier.citationTitle IEEE Transactions on Electron Devices -
dc.type.journalArticle Article -
dc.contributor.affiliatedAuthor Jeong, J[Jeong, Jaewook] -
dc.contributor.affiliatedAuthor Kim, J[Kim, Joonwoo] -
dc.contributor.affiliatedAuthor Jeong, SM[Jeong, Soon Moon] -
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