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Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass

Title
Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass
Authors
Lee, SoobinKoo, JaseokKim, SammiKim, Soo-HyunCheon, TaehoonOh, Jong SeokKim, Suk JinKim, Woo Kyoung
DGIST Authors
Lee, Soobin; Koo, Jaseok; Kim, Sammi; Kim, Soo-Hyun; Cheon, Taehoon; Oh, Jong Seok; Kim, Suk Jin; Kim, Woo Kyoung
Issue Date
2013-05
Citation
Thin Solid Films, 535, 206-213
Type
Article
Article Type
Article; Proceedings Paper
Author Keywords
Cu(InGa)Se2MoSe2High-temperature X-ray diffractionRapid thermal processing
Keywords
SOLAR-CELLSCU(IN,GA)SE-2/MO INTERFACEKINETICSMOSE2
ISSN
0040-6090
Abstract
Multi-layered Mo, prepared using an in-line sputtering system, was selenized by reaction with Se vapor and thermal annealing of bilayer Mo/Se samples. In situ high-temperature X-ray diffraction analysis indicated that the phase evolution of the glass/Mo/Se sample during heat treatment was similar to that of the selenization of glass/Mo with Se vapor, except for crystallization of Se in the glass/Mo/Se sample. However, the MoSe2 layer formed from the selenization of the Mo layer by Se vapor preferentially grew perpendicularly to the Mo surface, whereas MoSe2 formed from the reaction of Mo with Se liquid showed random orientation. The detailed reaction pathways of the double-layer random-MoSe2/vertical-MoSe2 formation from the Mo/Se bilayer sample were suggested on the basis of the several characterization results including X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and selected-area electron diffraction patterns. © 2012 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/3238
DOI
10.1016/j.tsf.2012.10.035
Publisher
Elsevier
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