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Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass
- Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass
- Lee, S[Lee, Soobin]; Koo, J[Koo, Jaseok]; Kim, S[Kim, Sammi]; Kim, SH[Kim, Soo-Hyun]; Cheon, T[Cheon, Taehoon]; Oh, JS[Oh, Jong Seok]; Kim, SJ[Kim, Suk Jin]; Kim, WK[Kim, Woo Kyoung]
- DGIST Authors
- Cheon, T[Cheon, Taehoon]
- Issue Date
- Thin Solid Films, 535, 206-213
- Article Type
- Article; Proceedings Paper
- Cu(In, Ga)Se2; Electron Diffraction; Energy Dispersive X Ray Spectroscopy; Glass; High-Temperature X-Ray Diffraction; High Temperature X-Ray Diffraction; MoSe2; Random Orientations; Rapid Thermal Annealing; Rapid Thermal Processing (RTP); Reaction Pathways; Scanning Electron Microscopy; Selected Area Electron Diffraction Pattern; Sputtering Systems; Superconducting Films; Thermal-Annealing; Transmission Electron Microscopy; Vapors; X Ray Diffraction Analysis; X Ray Spectroscopy
- Multi-layered Mo, prepared using an in-line sputtering system, was selenized by reaction with Se vapor and thermal annealing of bilayer Mo/Se samples. In situ high-temperature X-ray diffraction analysis indicated that the phase evolution of the glass/Mo/Se sample during heat treatment was similar to that of the selenization of glass/Mo with Se vapor, except for crystallization of Se in the glass/Mo/Se sample. However, the MoSe2 layer formed from the selenization of the Mo layer by Se vapor preferentially grew perpendicularly to the Mo surface, whereas MoSe2 formed from the reaction of Mo with Se liquid showed random orientation. The detailed reaction pathways of the double-layer random-MoSe2/vertical-MoSe2 formation from the Mo/Se bilayer sample were suggested on the basis of the several characterization results including X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and selected-area electron diffraction patterns. © 2012 Elsevier B.V.
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