Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique
- Title
- Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique
- Author(s)
- Hong, TE[Hong, Tae Eun] ; Choi, SK[Choi, Sang-Kyung] ; Kim, SH[Kim, Soo-Hyun] ; Cheon, T[Cheon, Taehoon]
- DGIST Authors
- Cheon, T[Cheon, Taehoon]
- Issued Date
- 2013-04
- Type
- Article
- Article Type
- Article
- Subject
- Aspect Ratio ; Atomic Layer Deposition ; Deposition ; Film Resistivity ; High Density ; Rutherford Back-Scattering Spectrometry ; Step Coverage ; Titanium Carbide ; Trench Structures
- ISSN
- 0002-7820
- Abstract
- TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society.
- Publisher
- Wiley Blackwell
- Files in This Item:
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- Appears in Collections:
- Center for Core Research Facilities 1. Journal Articles
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