Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique

Abstract

TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society.