WEB OF SCIENCE
SCOPUS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, Tae Eun | - |
| dc.contributor.author | Choi, Sang-Kyung | - |
| dc.contributor.author | Kim, Soo-Hyun | - |
| dc.contributor.author | Cheon, Taehoon | - |
| dc.date.available | 2017-07-11T06:36:22Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2013-04 | - |
| dc.identifier.issn | 0002-7820 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3242 | - |
| dc.description.abstract | TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society. | - |
| dc.publisher | Wiley Blackwell | - |
| dc.title | Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1111/jace.12289 | - |
| dc.identifier.scopusid | 2-s2.0-84876135354 | - |
| dc.identifier.bibliographicCitation | Hong, Tae Eun. (2013-04). Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique. Journal of the American Ceramic Society, 96(4), 1060–1062. doi: 10.1111/jace.12289 | - |
| dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | DIFFUSION BARRIER | - |
| dc.subject.keywordPlus | TIN FILMS | - |
| dc.citation.endPage | 1062 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 1060 | - |
| dc.citation.title | Journal of the American Ceramic Society | - |
| dc.citation.volume | 96 | - |
