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dc.contributor.author Hong, Tae Eun -
dc.contributor.author Choi, Sang-Kyung -
dc.contributor.author Kim, Soo-Hyun -
dc.contributor.author Cheon, Taehoon -
dc.date.available 2017-07-11T06:36:22Z -
dc.date.created 2017-04-10 -
dc.date.issued 2013-04 -
dc.identifier.issn 0002-7820 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3242 -
dc.description.abstract TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society. -
dc.publisher Wiley Blackwell -
dc.title Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique -
dc.type Article -
dc.identifier.doi 10.1111/jace.12289 -
dc.identifier.scopusid 2-s2.0-84876135354 -
dc.identifier.bibliographicCitation Journal of the American Ceramic Society, v.96, no.4, pp.1060 - 1062 -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus DIFFUSION BARRIER -
dc.subject.keywordPlus TIN FILMS -
dc.citation.endPage 1062 -
dc.citation.number 4 -
dc.citation.startPage 1060 -
dc.citation.title Journal of the American Ceramic Society -
dc.citation.volume 96 -
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