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DC Field Value Language Hong, TE[Hong, Tae Eun] ko Choi, SK[Choi, Sang-Kyung] ko Kim, SH[Kim, Soo-Hyun] ko Cheon, T[Cheon, Taehoon] ko 2017-07-11T06:36:22Z - 2017-04-10 - 2013-04 -
dc.identifier.citation Journal of the American Ceramic Society, v.96, no.4, pp.1060 - 1062 -
dc.identifier.issn 0002-7820 -
dc.identifier.uri -
dc.description.abstract TiCx films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH2C(CH3) 3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt-structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ∼0.52 and the film resistivity was as low as ∼600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ∼4.5. © 2013 The American Ceramic Society. -
dc.publisher Wiley Blackwell -
dc.subject Aspect Ratio -
dc.subject Atomic Layer Deposition -
dc.subject Deposition -
dc.subject Film Resistivity -
dc.subject High Density -
dc.subject Rutherford Back-Scattering Spectrometry -
dc.subject Step Coverage -
dc.subject Titanium Carbide -
dc.subject Trench Structures -
dc.title Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique -
dc.type Article -
dc.identifier.doi 10.1111/jace.12289 -
dc.identifier.wosid 000317407600012 -
dc.identifier.scopusid 2-s2.0-84876135354 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Hong, TE[Hong, Tae Eun] -
dc.contributor.nonIdAuthor Choi, SK[Choi, Sang-Kyung] -
dc.contributor.nonIdAuthor Kim, SH[Kim, Soo-Hyun] -
dc.identifier.citationVolume 96 -
dc.identifier.citationNumber 4 -
dc.identifier.citationStartPage 1060 -
dc.identifier.citationEndPage 1062 -
dc.identifier.citationTitle Journal of the American Ceramic Society -
dc.type.journalArticle Article -
dc.contributor.affiliatedAuthor Cheon, T[Cheon, Taehoon] -
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