Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Choi, Sang-Hyeok | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Park, Ji-Yoon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Kim, Hoon | - |
dc.contributor.author | Kim, Min-Kyu | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.available | 2017-07-11T06:41:15Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3296 | - |
dc.description.abstract | Ruthenium (Ru) thin filmswere grown on thermally-grown SiO2 substrate using atomic layer deposition (ALD) by a sequential supply of a zero-valent metallorganic precursor, (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru(0) (EBECHRu, C16H22Ru), and molecular oxygen (O 2) between 140 and 350°C while the typical temperature was 225°C. A self-limiting film growth was confirmed at the deposition temperature of 225°C and the growth rate was∼0.042 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 3 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.67 × 1012/cm2 was obtained after 7 ALD cycles. A continuous Ru film with a thickness of ∼2.3 nm was formed after 60 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity and microstructure, and the minimum resistivity of ∼14 μ-cm was obtained at the deposition temperature of 350°C. The step coverage of the film deposited between 225 and 270°C was approximately 100% over the contact holes (bottom diameter: 0.065 μm) with a high aspect ratio (32:1). Finally, the ALD-Ru film was successfully evaluated in terms of its performance as a seed layer for Cu electroplating and as a bottom electrode for a metal-insulator-metal capacitor using an ALD-TiO2 single layer or an ALD HfO2/La 2O3/HfO2 multilayer as a dielectric. © 2012 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O-2 | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/2.001303jss | - |
dc.identifier.scopusid | 2-s2.0-84879242440 | - |
dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.2, no.3, pp.P47 - P53 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ALD | - |
dc.citation.endPage | P53 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | P47 | - |
dc.citation.title | ECS Journal of Solid State Science and Technology | - |
dc.citation.volume | 2 | - |
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