Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Seo, Dong Kyu | - |
dc.contributor.author | Kim, Jun Hyeon | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.date.available | 2017-07-11T06:52:27Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | Surface and Interface Analysis, v.44, no.11-12, pp.1519 - 1521 | - |
dc.identifier.issn | 0142-2421 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3319 | - |
dc.description.abstract | Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO3(ZnO)2 superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 19 cm-3. Copyright © 2012 John Wiley &Sons, Ltd. | - |
dc.language | English | - |
dc.publisher | Wiley Blackwell | - |
dc.title | Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/sia.4990 | - |
dc.identifier.wosid | 000311383700033 | - |
dc.identifier.scopusid | 2-s2.0-84882454187 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | Surface and Interface Analysis | - |
dc.contributor.nonIdAuthor | Seo, Dong Kyu | - |
dc.contributor.nonIdAuthor | Kim, Jun Hyeon | - |
dc.contributor.nonIdAuthor | Cho, Hyung Koun | - |
dc.identifier.citationVolume | 44 | - |
dc.identifier.citationNumber | 11-12 | - |
dc.identifier.citationStartPage | 1519 | - |
dc.identifier.citationEndPage | 1521 | - |
dc.identifier.citationTitle | Surface and Interface Analysis | - |
dc.type.journalArticle | Article; Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | thermoelectric | - |
dc.subject.keywordAuthor | InGaO3(ZnO)m | - |
dc.subject.keywordAuthor | superlattice | - |
dc.subject.keywordAuthor | plasma treatment | - |
dc.contributor.affiliatedAuthor | Seo, Dong Kyu | - |
dc.contributor.affiliatedAuthor | Kim, Jun Hyeon | - |
dc.contributor.affiliatedAuthor | Kim, Jae Hyun | - |
dc.contributor.affiliatedAuthor | Cho, Hyung Koun | - |
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