Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Hong, TE[Hong, Tae Eun] | ko |
dc.contributor.author | Mun, KY[Mun, Ki-Yeung] | ko |
dc.contributor.author | Choi, SK[Choi, Sang-Kyung] | ko |
dc.contributor.author | Park, JY[Park, Ji-Yoon] | ko |
dc.contributor.author | Kim, SH[Kim, Soo-Hyun] | ko |
dc.contributor.author | Cheon, T[Cheon, Taehoon] | ko |
dc.contributor.author | Kim, WK[Kim, Woo Kyoung] | ko |
dc.contributor.author | Lim, BY[Lim, Byoung-Yong] | ko |
dc.contributor.author | Kim, S[Kim, Sunjung] | ko |
dc.date.available | 2017-07-11T06:54:28Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-07-31 | - |
dc.identifier.citation | Thin Solid Films, v.520, no.19, pp.6100 - 6105 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3351 | - |
dc.description.abstract | Ruthenium (Ru) thin films were grown by atomic layer deposition using IMBCHRu [(η6-1-Isopropyl-4-MethylBenzene)(η4-CycloHexa-1,3-diene) Ruthenium(0)] as a precursor and a nitrogen-hydrogen mixture (N 2/H 2) plasma as a reactant, at the substrate temperature of 270°C. In the wide range of the ratios of N 2 and total gas flow rates (fN 2/N 2 + H 2) from 0.12 to 0.70, pure Ru films with negligible nitrogen incorporation of 0.5 at.% were obtained, with resistivities ranging from ∼ 20 to ∼ 30 μ cm. A growth rate of 0.057 nm/cycle and negligible incubation cycle for the growth on SiO 2 was observed, indicating the fast nucleation of Ru. The Ru films formed polycrystalline and columnar grain structures with a hexagonal-close-packed phase. Its resistivity was dependent on the crystallinity, which could be controlled by varying the deposition parameters such as plasma power and pulsing time. Cu was electroplated on a 10-nm-thick Ru film. Interestingly, it was found that the nitrogen could be incorporated into Ru at a higher reactant gas ratio of 0.86. The N-incorporated Ru film (∼ 20 at.% of N) formed a nanocrystalline and non-columnar grain structure with the resistivity of ∼ 340 μ cm. © 2012 Elsevier B.V. All rights reserved. | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | Atomic Layer Deposition | - |
dc.subject | Columnar Grain Structure | - |
dc.subject | Copper | - |
dc.subject | Copper Metallization | - |
dc.subject | Crystal Microstructure | - |
dc.subject | Crystallinities | - |
dc.subject | Deposition Parameters | - |
dc.subject | Fast Nucleation | - |
dc.subject | Grain Size and Shape | - |
dc.subject | Hydrogen | - |
dc.subject | Microstructure | - |
dc.subject | N-Incorporation | - |
dc.subject | Nano-Crystallines | - |
dc.subject | Nitrogen | - |
dc.subject | Nitrogen Incorporation | - |
dc.subject | Nitrogen Plasma | - |
dc.subject | Nitrogen/Hydrogen Plasma | - |
dc.subject | Olefins | - |
dc.subject | Plasma Deposition | - |
dc.subject | Plasma Power | - |
dc.subject | Polycrystalline | - |
dc.subject | Reactant Gas | - |
dc.subject | Ru Film | - |
dc.subject | Ru Thin Films | - |
dc.subject | Ruthenium | - |
dc.subject | Seed Layer | - |
dc.subject | Substrate Temperature | - |
dc.subject | Thin-Films | - |
dc.subject | Toluene | - |
dc.subject | Vapor Deposition | - |
dc.title | Atomic layer deposition of Ru thin film using N-2/H-2 plasma as a reactant | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2012.05.069 | - |
dc.identifier.wosid | 000306104900009 | - |
dc.identifier.scopusid | 2-s2.0-84863601202 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Hong, TE[Hong, Tae Eun] | - |
dc.contributor.nonIdAuthor | Mun, KY[Mun, Ki-Yeung] | - |
dc.contributor.nonIdAuthor | Choi, SK[Choi, Sang-Kyung] | - |
dc.contributor.nonIdAuthor | Park, JY[Park, Ji-Yoon] | - |
dc.contributor.nonIdAuthor | Kim, SH[Kim, Soo-Hyun] | - |
dc.contributor.nonIdAuthor | Kim, WK[Kim, Woo Kyoung] | - |
dc.contributor.nonIdAuthor | Lim, BY[Lim, Byoung-Yong] | - |
dc.contributor.nonIdAuthor | Kim, S[Kim, Sunjung] | - |
dc.identifier.citationVolume | 520 | - |
dc.identifier.citationNumber | 19 | - |
dc.identifier.citationStartPage | 6100 | - |
dc.identifier.citationEndPage | 6105 | - |
dc.identifier.citationTitle | Thin Solid Films | - |
dc.type.journalArticle | Article | - |
dc.contributor.affiliatedAuthor | Cheon, T[Cheon, Taehoon] | - |
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