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Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2
- Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2
- Eom, TK[Eom, Tae-Kwang]; Sari, W[Sari, Windu]; Choi, KJ[Choi, Kyu-Jeong]; Shin, WC[Shin, Woong-Chul]; Kim, JH[Kim, Jae Hyun]; Lee, DJ[Lee, Do-Joong]; Kim, KB[Kim, Ki-Bum]; Sohn, H[Sohn, Hyunchul]; Kim, SH[Kim, Soo-Hyun]
- DGIST Authors
- Kim, JH[Kim, Jae Hyun]
- Issue Date
- Electrochemical and Solid State Letters, 12(11), D85-D88
- Article Type
- Aspect Ratio; Atomic Layer Deposition; Contact Holes; Cyclohexadienes; Cyclopentadienyls; Deposition; High Aspect Ratio; Low Temperatures; Methylbenzenes; Olefins; Organometallics; Ru Film; Ru Thin Films; Ruthenium; Silicon Compounds; Step Coverage; Thin-Films; Titanium Nitride; Toluene; Transmission Electron; Transmission Electron Microscopy
- Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1). © 2009 The Electrochemical Society.
- Electrochemical Society
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