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Fabrication and characteristics of varactor diode for UHF TV tuner operated within ultra-low tuning voltage

Title
Fabrication and characteristics of varactor diode for UHF TV tuner operated within ultra-low tuning voltage
Author(s)
Kim, H. S.Shon, Yeong SooChoi, S.-Y.
DGIST Authors
Kim, H. S.Shon, Yeong SooChoi, S.-Y.
Issued Date
2007-03
Type
Article
Article Type
Article
Keywords
BandwidthDESIGNDiodesDoping (Additives)Quality FactorSemiconductor JunctionsTunersTuning FrequencyUltra-High-Frequency (UHF)Varactors
ISSN
0013-5194
Abstract
A varactor diode for a ultra-high-frequency (UHF) TV tuner that can be operated within 5V of tuning voltage (VT) is presented. The fabricated diode has a shallow junction with a heavily doped p++ region on a steep hyperabrupt n+ region. Depletion capacitance was from 18.2pF at VT=0.5V to 2.8pF at VT=5V. This enables the diode to tune the UHF full band without a DC-DC converter. The quality factor of the diode was 20 at VT=0.5V and 470MHz of tuning frequency (f T).
URI
http://hdl.handle.net/20.500.11750/3587
DOI
10.1049/el:20070081
Publisher
Institute of Electrical Engineers
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