The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
Issued Date
2010-10-13
Citation
Kim, Jung Hye. (2010-10-13). The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA Display 2010), 476–477.
Type
Conference Paper
ISBN
9781617827020
ISSN
1738-7558
Abstract
The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
