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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
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- Title
- The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
- Issued Date
- 2010-10-13
- Citation
- Kim, Jung Hye. (2010-10-13). The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA Display 2010), 476–477.
- Type
- Conference Paper
- ISBN
- 9781617827020
- ISSN
- 1738-7558
- Abstract
-
The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
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- Publisher
- 한국정보디스플레이학회(The Korean Information Display Society)
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