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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors

Title
The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
Author(s)
Kim, Jung HyeSon, Dae-HoSung, Shi-JoonJung, Eun AeKang, Jin-KyuHa, Ki RyongKim, Dae-Hwan
Issued Date
2010-10-13
Citation
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA Display 2010), pp.476 - 477
Type
Conference Paper
ISBN
9781617827020
ISSN
1738-7558
Abstract
The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
URI
http://hdl.handle.net/20.500.11750/3961
Publisher
한국정보디스플레이학회(The Korean Information Display Society)
Related Researcher
  • 성시준 Sung, Shi-Joon 에너지환경연구부
  • Research Interests Compound Semiconductor Materials & Processes
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Appears in Collections:
Division of Electronics & Information System 2. Conference Papers
Division of Energy Technology 2. Conference Papers

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