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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors

Title
The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
Author(s)
Kim, Jung-HyeSon, Dae-HoSung, Shi-JoonJung, Eun-AeKang, Jin-KyuHa, Ki RyongKim, Dae-Hwan
DGIST Authors
Kim, Jung-HyeSon, Dae-HoSung, Shi-JoonJung, Eun-AeKang, Jin-KyuKim, Dae-Hwan
Issued Date
2010
Type
Conference
Article Type
Conference Paper
ISBN
9781617827020
ISSN
1738-7558
Abstract
The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
URI
http://hdl.handle.net/20.500.11750/3961
Publisher
Society for Information Display
Related Researcher
  • 성시준 Sung, Shi-Joon 에너지융합연구부
  • Research Interests Compound Semiconductor Materials & Processes
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Convergence Research Center for Solar Energy 2. Conference Papers

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