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DC Field Value Language Kim, Jae Hyun ko Choi, Mi Kyung ko Seo, Hong-Seok ko Han, Won Suk ko Kim, Young Yi ko Kong, Bo Hyun ko Cho, Hyung Koun ko Lee, Jung-Ho ko 2017-07-11T08:21:45Z - 2017-05-08 - 2009 -
dc.identifier.citation Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium - 216th ECS Meeting, v.25, no.9, pp.177 - 182 -
dc.identifier.isbn 9780000000000 -
dc.identifier.issn 1938-5862 -
dc.identifier.uri -
dc.description.abstract n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes (LEDs) were fabricated using patterned Si substrates having larger junction area than normal flat ones where recombined photons are generated. The patterned p-type Si substrates were prepared by anodization which is very cost competitive method, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. The truncated patterning of the substrates resulted in approximately 75 % improvement in output power compared with the LED without the pattern, which was attributed to a 1.33-fold increase in the junction area through patterning. © The Electrochemical Society. -
dc.publisher Electrochemical Society -
dc.title Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates -
dc.type Conference -
dc.identifier.doi 10.1149/1.3211175 -
dc.identifier.scopusid 2-s2.0-76549123667 -
dc.type.rims CONF -
dc.contributor.nonIdAuthor Choi, Mi Kyung -
dc.contributor.nonIdAuthor Seo, Hong-Seok -
dc.contributor.nonIdAuthor Han, Won Suk -
dc.contributor.nonIdAuthor Kim, Young Yi -
dc.contributor.nonIdAuthor Kong, Bo Hyun -
dc.contributor.nonIdAuthor Cho, Hyung Koun -
dc.contributor.nonIdAuthor Lee, Jung-Ho -
dc.identifier.citationVolume 25 -
dc.identifier.citationNumber 9 -
dc.identifier.citationStartPage 177 -
dc.identifier.citationEndPage 182 -
dc.identifier.citationTitle Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium - 216th ECS Meeting -
dc.type.journalArticle Conference Paper -
dc.identifier.conferencecountry US -
dc.identifier.conferencelocation Vienna -
dc.contributor.affiliatedAuthor Kim, Jae Hyun -
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